8 results about "Surface trap" patented technology

The application discloses a preparation method of a metal oxide passivation film on a gallium nitride surface; the method comprises the following steps: mixing a metal nitrate precursor solution and a hole sacrificial agent to obtain a mixed solution; placing a substrate containing a GaN layer into the mixed solution and performing photochemical deposition under ultraviolet light to obtain a metal oxide passivation film formed on the surface of the GaN layer. The preparation method uses a metal nitrate as a precursor, and under ultraviolet light, photo-generated electrons and holes of the GaN are used to initiate a redox reaction at a solid / liquid interface to form a uniform and dense metal oxide passivation film. The method is simple in process, is performed at room temperature, does not need vacuum, has small interface damage, can be used to reduce the trap state density of the GaN surface, improve the interface stability and reliability of a device, and is suitable for surface / interface passivation treatment of power electronic and ultraviolet photoelectric devices.

The invention discloses a perovskite quantum dot elastomer, a preparation method thereof and a display device. The elastomer comprises perovskite quantum dots and an allyl ester polymer protective layer matrix, the perovskite quantum dots are dispersed in the matrix, and the allyl acrylate polymer matrix coats the peripheries of the perovskite quantum dots to protect the perovskite quantum dots; the component of the perovskite quantum dot is CsPbX3, X is Cl or Br, the matrix of the allyl ester polymer protective layer is a butyl rubber-OOCCnH2n + 1 polymer, and the perovskite quantum dot is prepared through an in-situ chemical reaction. The allyl ester polymer chain forms a passivation layer on a perovskite quantum dot interface, surface traps are inhibited, and entry of H2O / O2 is prevented. The perovskite quantum dot elastomer has the advantages of good film-forming property, high fluorescence quantum efficiency, good stability, long fluorescence lifetime and adjustable light-emitting wavelength, and can be applied to the fields of backlight display and the like.

The invention relates to an ion surface trap (10) with (a) an electrode pair (12) that comprises a first trap electrode (14.1) and a second trap electrode (14.2) and is configured to form a trap volume for at least one ion (22) when an electrical AC voltage is applied, (b) at least two AC voltage electrodes (16) arranged to close the trap volume and / or generate an electrical field, by means of which an ion position of an ion (22) trapped in the ion surface trap can be modified relative to the ion surface trap (10), and (c) a sensor for detecting photons (20) emitted by at least one ion (22), wherein (d) the sensor is an energy-sensitive measuring superconductor sensor (18) that has a superconductor layer / separating layer / superconductor layer structure and (e) at least the first superconductor layer (24, 28) forms the first trap electrode (14).

The invention discloses a low surface trap state GaN HEMT (High Electron Mobility Transistor) device based on quasi-single crystal passivation and a preparation method thereof. The preparation method comprises the following steps: sequentially forming a nucleating layer, a buffer layer, a channel layer and a barrier layer on a substrate layer; a pseudo-single crystal passivation layer is formed in the gap region, and the pseudo-single crystal passivation layer is in direct contact with the upper interface of the barrier layer; the gap region includes a region between the source region and the gate region, and includes a region between the drain region and the gate region. According to the method provided by the invention, the first passivation layer is deposited on the barrier layer, and the first passivation layer is rapidly annealed to realize quasi-single crystallization, so that the interface state between the passivation layer and the barrier layer is improved, and the reliability of the device is improved.

This invention discloses a high-efficiency LED made of perovskite quantum dots with in-situ passivation using ODADBr and its preparation method. ITO is used as the anode; PEDOT:PSS is used as the hole injection layer with a thickness of 40 nm; Poly-TPD is used as the hole transport layer with a thickness of 20 nm; PMMA is used as the interface modification layer with a thickness of 5 nm; ODADBr is 1,8-octanediamine hydrobromide; the original CsPbBr3 quantum dots, in situ passivated with ODADBr, form the light-emitting layer with a thickness of 15 nm; TPBi is used as the electron transport layer with a thickness of 50 nm; LiF is used as the electron injection layer with a thickness of 1 nm; and Al is used as the cathode with a thickness of 100 nm. ODADBr passivation is used to passivate the surface traps of the CsPbBr3 quantum dots synthesized by high-temperature thermal injection, reducing excess Pb on the quantum dot surface. 2+ With V Br This improves the fluorescence lifetime, luminescence intensity, and fluorescence quantum yield (PLQY) of the material, thereby enhancing its stability. When applied to LEDs, this can achieve high brightness, high purity, high external quantum efficiency, and improved device lifespan.

The application discloses a photovoltaic device and a preparation method thereof, and belongs to the technical field of photovoltaic devices. The photovoltaic device comprises, from bottom to top, a substrate, an electron transport layer, a YbBr3 spin-coated modified PbS-PbX2 quantum dot layer, a PbS-EDT layer and a metal layer. In the photovoltaic device, YbBr3 is spin-coated on the surface of a PbS-PbX2 quantum dot layer after halogen ligand exchange is completed, so that Yb 3+ / Br ‑ forms an ionic coordination bond on the surface of PbS; first, by utilizing the quantum confinement characteristics of Yb 3+ , two 980 nm near-infrared photons are emitted after visible light with higher energy is absorbed, and then the photons are absorbed by adjacent PbS quantum dots again, so that the utilization rate of the photons is improved, and the short-circuit current and overall power conversion efficiency are significantly improved; second, Yb 3+ / Br ‑ passivates the surface vacancy defects, reduces the surface trap density, prolongs the carrier lifetime, improves the open-circuit voltage and the fill factor.

The invention discloses an n-type gallium nitride Schottky interface processing method and a preparation method of an n-type gallium nitride Schottky diode. The n-type gallium nitride Schottky interface processing method comprises the following steps: cleaning a Schottky interface of n-type gallium nitride by using a first ammonia water diluted solution; in a vacuum environment, nitrogen plasma is used for carrying out reaction repairing treatment on the Schottky interface of the n-type gallium nitride; and carrying out passivation repair treatment on the Schottky interface of the n-type gallium nitride by using a second ammonia water diluted solution, wherein the concentration of the second ammonia water diluted solution is smaller than that of the first ammonia water diluted solution. According to the invention, Ga-O bonds of n-type gallium nitride can be removed, a natural oxide layer can be removed, a surface defect state can be repaired, the content of surface impurity elements can be reduced, the surface appearance and properties can be improved, and the surface trap state density can be reduced, so that an interface state more suitable for Schottky preparation can be realized; according to the GaN Schottky diode prepared based on the method, the turn-on voltage is effectively reduced, the leakage current is improved, and the overall performance is improved.

The application provides a device and method for measuring surface trap distribution characteristics of insulating materials, which comprises a test cavity and a data acquisition system; the test cavity comprises a cavity shell, a rotating connecting rod, a clamping plate, a needle electrode, a grid electrode and a sample surface grounding ring electrode; the rotating connecting rod is fixed on the cavity shell; the clamping plate is fixed on the rotating connecting rod; the clamping plate comprises an upper end clamping plate, a middle clamping plate and a lower end clamping plate; the needle electrode is fixed on the upper end clamping plate; the grid electrode is fixed on the lower end clamping plate; the needle electrode applies high voltage and is used for generating charged particles through corona discharge; the grid electrode applies low voltage and is used for uniformizing the electric field between the needle electrode and the sample; the sample surface grounding ring electrode is arranged on the sample surface, a circular hole is formed in the center of the sample surface grounding ring electrode, and the needle electrode is opposite to the center of the circular hole during corona charging; and the data acquisition system is used for recording the sample surface potential. The device and method can improve the electric field distribution on the sample surface after corona charging and effectively measure the surface trap distribution characteristics of insulating materials.