39 results about "Surface trap" patented technology

A fluorine treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions is disclosed. A method to increase the breakdown voltage of AlGaN/GaN high electron mobility transistors, by the introduction of a controlled amount of dispersion into the device, is also disclosed. This dispersion is large enough to reduce the peak electric field in the channel, but low enough in order not to cause a significant decrease in the output power of the device. In this design, the whole transistor is passivated against dispersion with the exception of a small region 50 to 100 nm wide right next to the drain side of the gate. In that region, surface traps cause limited amounts of dispersion, that will spread the high electric field under the gate edge, therefore increasing the breakdown voltage. Three different methods to introduce dispersion in the 50 nm closest to the gate are described: (1) introduction of a small gap between the passivation and the gate metal, (2) gradually reducing the thickness of the passivation, and (3) gradually reducing the thickness of the AlGaN cap layer in the region close the gate.

An engine includes a camshaft supported in a housing for rotation about an axis of rotation. A cam gear is attached to one end of the camshaft and includes a first thrust bearing surface. A thrust ring is attached to the cam gear and includes a second thrust bearing surface. A thrust ring retainer is attached to the housing with a plurality of bolts and includes a pair of thrust surfaces trapped between the first thrust bearing surface of the cam gear and a second thrust bearing surface of the thrust ring. The thrust ring retainer also defines a portion of a lubrication connection passage that facilitates pressure equalization among a plurality of lubrication galleries arranged in parallel adjacent the camshaft.

The invention discloses a plasma jet deposition film device and a method of shallowing a surface trap level. The device comprises a plasma jet array, a bubbling bottle, a second air cylinder and a power supply. The plasma jet array is arranged in a tempered glass cavity and comprises a quartz tube, a hollow metal capillary tube, a copper foil and a three-dimensional mobile platform, wherein the hollow metal capillary tube is interspersed into the quartz tube, and the outer wall of the hollow metal capillary tube is not in contact with the inner wall of the quartz tube; the copper foil is arranged in the bottom of the quartz tube for grounding; the three-dimensional mobile platform is arranged right below the quartz tube to regulate movement of a sample; one end of the bubbling bottle is connected to a first air cylinder while the other end is connected to the upper orifice of the hollow metal capillary tube; the second air cylinder is connected to the upper orifice of the hollow metalcapillary tube; and the power supply is connected to the hollow metal capillary tube.

Provided are a slide structure, a support structure and a seismically isolated structure wherein a slide member (21) has a first sliding surface (25) of a sliding body (24) made of synthetic resin and a counter member (22) has a second surface (28) covered with a skin (27) made of synthetic resin that has more than twice as large Young's modulus as that of the first sliding surface. The skin surface is roughened such that the maximum height Rz of roughness is more than 3[mu]m. Small pits on the roughened surface trap lubricant thereby preventing the lubricant from flowing out and thereby providing a stable and low friction state.

The invention discloses a method of increasing a vacuum surface flashover voltage of an insulating dielectric material and a modified insulating dielectric material. The method comprises the steps of modifying the surface of a solid insulating dielectric material by adopting ozone, to be specific, putting the to-be-processed solid insulating dielectric material in a sealed cavity, vacuumizing the sealed cavity and then inletting ozone for ozone treatment to obtain the modified insulating dielectric material. The surface conductivity, the surface trap level and the trap density of the insulating dielectric material after the ozone treatment are changed; the surface conductivity is increased obviously, the surface trap level is reduced and the trap density is increased. The method can obviously increase the vacuum alternating current surface flashover voltage of the solid insulating dielectric material; and the method is simple and convenient to operate, has low complexity of the implementation process, relatively good repeatability and strong environmental friendliness, and can be widely applied to the surface treatment of the solid insulating dielectric material in the technical field of high-voltage insulation.

The invention discloses a GaN-based HEMT device and a preparation method thereof. The GaN-based HEMT device comprises a substrate, a buffering layer, a channel layer, a potential barrier layer, a caplayer, a source electrode, a grid electrode and a drain electrode. Due to the fact that an H plasma processing technology is applied to prepare the cap layer to a high-impedance state to optimize theinternal electric field distribution of the GaN-base HEMT device in the preparation process of the GaN-base HEMT device, the influence of surface traps on the property of the device is reduced.

The invention discloses a metal-semiconductor field effect transistor formed in silicon carbide, mainly solving the problem of surface trap formed on the surface when making a component. The transistor comprises a semi-insulating silicon carbide substrate (1), a p-type silicon carbide buffer layer (2), a n-type silicon carbide conducting channel layer (3), a n+ capping layer (5), a source electrode (7) and a drain electrode (8), wherein a n-type silicon carbide buffer layer (4) is arranged between the n-type silicon carbide conducting channel layer (3) and the n+ capping layer (5); and a grid electrode (6) are buried inside the buffer layer to form a buried-channel and buried-grid structure. The process of making the component comprises the following steps of: epitaxially growing the p-type silicon carbide buffer layer, the n-type silicon carbide channel layer, the n-type silicon carbide buffer layer and n+ capping layer in sequence; etching grid recession windows on the n+ capping layer and carrying out sacrificial oxidation; and forming the source electrode, the drain electrode and the grid electrode by evaporating metal and peeling. The metal-semiconductor field effect transistor can be used for the manufacturing of high-frequency and high-power integrated circuits.

The present invention discloses a surface processing technology and a method for improving the surface passivation effect of the gallium nitride-based electronic device and reducing the current collapse. The method is mainly applied to the preparation of the gallium nitride-based electronic device, before the conventional passivation layer deposition, ozone, oxygen plasma and other strong oxidants are used on the surface of gallium nitride for oxidation, then hydrochloric acid is used to remove a thin layer of oxide, and the process is repeated for a number of cycles before the surface passivation to completely remove surface defects, so as to get a relatively perfect surface, thereby improving the surface passivation effect, reducing the current collapse caused by the surface trapping effect.

Traps, devices, systems, compositions, and methods for trapping bed bugs, and similar insects with sticky traps having a smooth perimeter surface around the sticky surface, where the smooth perimeter surface can be abraded to a selected texture having both smoothness and roughness qualities. The surfaces are textured so that bed bugs are not able to use the surfaces to pull themselves from the sticky surface, and the textured surface is not so smooth as to cause the bed bugs to avoid the textured surface.

The invention relates to a dielectric medium trap state measuring and imaging system and method driven by a friction nanometer generator, and belongs to the technical field of dielectric media. The system comprises a trap excitation power supply device and a test sample chamber, the trap excitation power supply device comprises an independent layer rotary friction nano generator and a rotary motor, and can output constant charge and high voltage, excite micro-power dielectric barrier uniform discharge on the surface of a dielectric medium, so that electrons are fully sunken and desunken, and desunken current pulses with enough strength and stability are generated; a test sample chamber is used for fixing the dielectric film to be tested and providing controllable filling gas; a test electrode structure is detachable, and electrode groups with different measurement modes can be replaced; and the air gap distance between the upper and lower electrodes can be adjusted. The system has the advantages of being lossless, accurate and capable of achieving two-dimensional imaging, detailed information of trap state distribution on the surface of the high polymer thin film material is further obtained, and detection and improvement of various properties such as insulation, energy storage and micro-nano surface characteristics of the functional material are facilitated.

The invention provides an intelligent sea-surface trapping fishing cage. The intelligent sea-surface trapping fishing cage comprises a photovoltaic power generator, a floating box, a control processor, a Beidou short message module, a fish school detector, an LED module, a luring box, a lithium battery and a fishing net and is characterized in that an intelligent control mode is used, the fish school detector is used to detect the fish school outside the fishing cage, the control processor precisely controls the LED module and the luring box to lure the fish school, and the Beidou short message module is utilized to transmit information to fishing staff so as to allow the fishing staff to position and collect the fishing cage. A fishing method using the intelligent sea-surface trapping fishing cage greatly lowers fishing cost and fishing labor intensity and increases fishing efficiency, and the situation that the fishing staff return without fishes is avoided.

The embodiment of the invention discloses a high-field surface trap evaluation system. The system comprises an upper electrode plate, a lower electrode plate, a temperature control cavity, an electrode circuit, a temperature probe and a temperature detection device; the upper electrode plate and the lower electrode plate are oppositely arranged in the temperature control cavity, and the space between the upper electrode plate and the lower electrode plate is used for placing samples; a temperature control device is arranged inside the temperature control cavity; the electrode circuit comprises a power supply, a first switch, a second switch and an ammeter; one end of the power supply is connected with one end of the first switch, and the other end of the first switch is connected with the upper electrode plate; the other end of the power supply is connected with the lower electrode plate and one end of the ammeter separately; one end of the second switch is connected with the other end of the ammeter, and the other end of the second switch is connected with the other end of the first switch; the temperature probe is connected with the temperature detection device and located in the temperature control cavity. According to the high-field surface trap evaluation system, the variation rules of the trap characteristics of the samples in a high field can be learned to study the trap characteristics of dielectric materials in the high filed.

The invention discloses a gallium nitride transistor structure and a preparation method thereof. The gallium nitride transistor structure includes: a substrate 1; a GaN-based buffer layer 2 located onthe substrate 1; an InxAlyGa1-x-yN/GaN heterojunction epitaxial structure positioned on the GaN-based buffer layer 2; a source electrode 6 positioned at one end of the surface of the InxAlyGa1-x-yN/GaN heterojunction epitaxial structure; a drain electrode 5 positioned at the other end of the surface of the InxAlyGa1-x-yN/GaN heterojunction epitaxial structure; and a p-type oxide film and a gate 7which are located at the surface of the InxAlyGa1-x-yN/GaN heterojunction epitaxial structure. The p-type oxide film is arranged between the source electrode 6 and the drain electrode 5 at the surface of the InxAlyGa1-x-yN/GaN heterojunction epitaxial structure to obtain the GaN transistor structure of the p-type oxide intercalation to suppress the current collapse effect, and the virtual gate effect is relieved by neutralizing electrons in the hole in the p-type oxide and captured by surface traps.

The invention discloses a method and device for improving the surface mobility of a silicon carbide lateral double-diffusion field effect transistor. The method comprises the steps: introducing a voltage bias tube, enabling the surface electron concentration of a drift region to be increased when a silicon carbide LDMOS is in forward conduction, enabling the probability that a single electron is captured by a surface trap of an oxide layer above the drift region to be reduced, and enabling the electron mobility to be improved. The device comprises a P-type substrate, which is provided with a P-type isolation layer which divides the device into an LDMOS and a voltage bias tube, the LDMOS comprises a first N-type drift region, a first source region, a first drain region, a gate oxide layer and a polysilicon gate, and is characterized in that four polysilicon field plates which are separated from one another are arranged on the gate oxide layer, the voltage bias tube comprises a second N-type drift region, a second source region and a second drain region, four N+ injection layers are arranged in the second N-type drift region, the polysilicon gate is connected with the second source region, the first drain region is connected with the second drain region, and the four polysilicon field plates are respectively connected with the four N+ injection layers.

The invention discloses a nano coating for inhibiting surface charge accumulation of epoxy resin and a preparation method. The preparation method comprises the following steps that S1, MMT is weighedand dispersed in deionized water to form a suspension with a mass concentration of 1wt%; S2, PVA and deionized water are added to the suspension prepared in step S1 to enable the PVA mass to account for 40wt%-60wt% of the total solid mass of the PVA and the MMT, and the total solid mass fraction in the solution is 1wt%-2wt%; S3, after complete dissolution of the PVA, a cross-linking agent GA is added, and ultrasonic treatment is performed for 15-30 min under the constant temperature to form a PVA/MMT dispersion system; S4, epoxy resin insulators are treated in the plasmas for 4-8 minutes; andS5, the epoxy resin insulators are vertically immersed into the immersion liquid PVA/MMT dispersion system, and a PVA/MMT two-dimensional nano coating is formed. The coating has a special nano-scale layer structure, can reduce the surface trap level of the epoxy resin insulators from 1.02eV to 0.86eV, and facilitates evacuation of charge carriers along the surface of parallel organic silicate crystal sheet layers; and the surface charge accumulation of the insulators can be reduced, so that the direct current flashover voltage is increased by about 20%.

The invention belongs to the field of manufacturing of semiconductor devices, and particularly relates to a preparation method of a GaN-based planar Schottky varactor. The preparation method comprisesthe steps of 1) manufacturing an alignment mark; 2) manufacturing an ohmic electrode; 3) manufacturing a Schottky metal eave structure through primary planarization; 4) conducting Schottky metal evaporation; 5) etching an insulating table; 6) carrying out secondary planarization; and 7) electroplating to form an air bridge, an electrode pad and interconnection metal to obtain the GaN-based planarSchottky varactor. The etching condition of the metal eave structure is effectively improved, the surface quality of the side wall is improved, and trapped charges on the surface of the side wall arereduced, so that the reverse bias characteristic of the device is improved; and errors introduced by the process of the air bridge structure are improved, and parasitic capacitance of the device is effectively reduced.

The invention discloses a molybdenum disulfide/graphene composite heterojunction and a preparation method thereof. The molybdenum disulfide/graphene composite heterojunction comprises a substrate 1, a molybdenum disulfide layer 2 and a graphene layer 3, wherein the molybdenum disulfide layer 2 is arranged on the substrate 1, and the graphene layer is arranged on the molybdenum disulfide layer 2. According to the preparation method, the sulfur vacancy of the prefabricated thin film is reduced and the crystallization quality of the molybdenum disulfide buffer layer is improved by optimizing the design of the process of preparing the MoS2/graphene composite heterojunction through magnetron sputtering and combining the annealing process, and meanwhile, the composite heterojunction thin film with high surface roughness is formed on the carbon film through argon ion sputtering; the average collision frequency of the secondary electrons and the surface trap wall can be effectively increased, so that the secondary electron emission phenomenon is inhibited.

A large water surface trapping Wuchang bream device comprises a feeding table formed by leaders; the feeding table is surrounding by three leaders in three directions, and provided with an opening; the leader behind the feeding table is connected with a fish gathering box; the leaders in front of/behind the fish gathering box are respectively provided with a front/back push-pull door; two ends of the front/back push-pull door are respectively provided with a push-pull door rope; the front/back push-pull door and the push-pull door ropes are matched to realize open/close of the doors; the leader behind the fish gathering box is connected with a fish taking box in a narrow rectangular box shape; the bottom of the fish taking box is provided with a bottom net connected with a net pulling rope; the bottom net can be pulled out or placed in the fish taking box through the bottom net; the leaders, the feeding table, the fish gather box, the fish taking box and the front/back push-pull doors are mutually connected and fixed through up-down steel ropes and positioning piles.