GaN-based HEMT device and preparation method thereof

A device and cap layer technology, applied in the field of GaN-based HEMT devices and its preparation, can solve the problems of complex field plate design, increased gate leakage current, large dynamic on-resistance, etc., and achieve the effect of reducing the effect of current collapse
CN109742142AInactive Publication Date: 2019-05-10PEKING UNIV SHENZHEN GRADUATE SCHOOL
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
PEKING UNIV SHENZHEN GRADUATE SCHOOL
Publication Date
2019-05-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a GaN-based HEMT device and a preparation method thereof. The GaN-based HEMT device comprises a substrate, a buffering layer, a channel layer, a potential barrier layer, a caplayer, a source electrode, a grid electrode and a drain electrode. Due to the fact that an H plasma processing technology is applied to prepare the cap layer to a high-impedance state to optimize theinternal electric field distribution of the GaN-base HEMT device in the preparation process of the GaN-base HEMT device, the influence of surface traps on the property of the device is reduced.
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Description

technical field

[0001] The invention relates to the field of semiconductor device manufacturing, in particular to a GaN-based HEMT device and a preparation method thereof. Background technique

[0002] Power devices featuring low power consumption and high speed have recently attracted a lot of attention as the need for efficient and complete power conversion circuits and systems has increased. Wide bandgap semiconductor gallium nitride GaN material has the characteristics of large bandgap width, high critical breakdown electric field, and high electron saturation velocity, and has become an ideal material for a new generation of semiconductor power devices. In recent years, GaN-based HEMT devices represented by Al(ln, Ga, Sc)N / GaN can improve the safety of circuit operation. GaN-based HEMT devices are normally-on devices. In circuits, power elements of the normally-off type, also known as enhancement-mode (e-mode) transistors, are preferred for fail-safe operation. To re...

Claims

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