Semiconductor structures and methods of forming them

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the steps of providing a substrate, wherein the substrate comprises an active region used for forming an active device and a passive region used for forming a passive device; forming pseudo gate structures located on the substrate in the active region and a resistance material layer locatedon the substrate in the passive region; forming source-drain doped regions on the substrate at two sides of the pseudo gate structures; after forming the source-drain doped regions, forming a dielectric layer on the substrate from which the pseudo gate structures and the resistance material layer are exposed, and exposing the pseudo gate structures and the resistance material layer out of the dielectric layer; removing the pseudo gate structures and forming gate openings in the dielectric layer; carrying out high-resistance injection on the resistance material layer exposed from the dielectric layer to form a resistor; and forming gate structures in the gate openings. According to the semiconductor structure and the forming method thereof, use of masks can be avoided in the high-resistance injection process, so that reduction of the process cost is facilitated.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] The main semiconductor device of an integrated circuit, especially a very large scale integrated circuit, is a metal-oxide-semiconductor field effect transistor (MOS transistor). With the continuous development of integrated circuit manufacturing technology, the technology nodes of semiconductor devices continue to decrease, and the geometric dimensions of semiconductor devices follow Moore's law. When the size of semiconductor devices is reduced to a certain extent, various secondary effects caused by the physical limits of semiconductor devices appear one after another, and it becomes more and more difficult to scale down the feature size of semiconductor devices. Among them, in the field of semiconductor manufacturing, the most challenging thing is how to solve the problem of large...

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Problems solved by technology

[0005] However, in the prior art, the formation of semiconductor structures with polysilicon resistance and high-K metal gates often has the problem of high process costs

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