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Micro-led device structure and manufacturing method

A technology of device structure and manufacturing method, which is applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of Micro-LED display device volume reduction, etc., achieve the effect of increasing viewing angle, simple manufacturing process, and improving conversion efficiency

Active Publication Date: 2020-09-01
FUZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, one of the technical difficulties in using quantum dots to achieve color conversion is that the thickness of the required quantum dot layer generally needs to be 5-10 microns to completely absorb the blue light used for excitation. This thickness will limit the further expansion of the volume of Micro-LED display devices. zoom out

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  • Micro-led device structure and manufacturing method

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Embodiment Construction

[0036] The present invention will be described in detail below with reference to the drawings and specific embodiments.

[0037] Such as figure 1 As shown, in the embodiment of the present invention, the device structure includes:

[0038] Multiple Micro-LED chips (17-112) that can form a display array, each Micro-LED chip is provided with multiple etched surfaces, the substrate on the etched surface and the epitaxial layer lattice grown on the etched surface Constant matching, the substrate outside the etched surface is mismatched with the epitaxial layer crystal lattice grown outside the etched surface; several etched surfaces constitute an inverted cone-shaped recess (if the etched surface geometrically constitutes the side of the cone , One etching surface can form an inverted conical recess), and each Micro-LED chip is provided with multiple recesses (for a chip with a sufficiently small size, the recess can also be set to only one, but for the composition display As far as t...

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Abstract

The invention relates to a Micro-LED device structure and a manufacture method thereof, wherein the Micro-LED device structure comprises: a display array formed by multiple Micro-LED chips, wherein the Micro-LED chips are provided with multiple etched faces, a substrate on the etched faces is matched with a lattice constant of epitaxial layers grown on the etched faces, the substrate outside the etched faces is mismatched with lattice of epitaxial layers grown outside the etched faces, the etched faces form one or more inverse-cone cavities, and each cavity is filled with or not filled with quantum dots to form a pixel, and each pixel on the display array is independently driven by a driving circuit. Micro-LED pixels can be formed automatically via lattice matching of epitaxial layer growth; the process used by a traditional pixel forming method to use multiple photoetching and etching is omitted; the manufacture method is simple, and the cost is low. The inverse-cone pixel structure can provide increased pixel area and enlarged view angle while pixel spacing is fixed; the inverse-cone pixel structure can provide increased thickness for a quantum dot color change layer, thus extending light transmission path and improving optical conversion efficiency.

Description

Technical field [0001] The invention relates to the field of new semiconductor displays, in particular to the structure and manufacturing method of a Micro-LED device. Background technique [0002] Micro-LED is a display technology that miniaturizes and matrixes the traditional LED structure, and uses CMOS integrated circuit technology to make a drive circuit to realize the addressing control and individual drive of each pixel. Because Micro-LED technology's brightness, life, contrast, reaction time, energy consumption, viewing angle and resolution and other indicators are stronger than LCD and OLED technology, plus it is self-luminous, simple in structure, small in size and energy saving The advantages of this product have been regarded by many manufacturers as the next-generation display technology and have begun to actively deploy. Because Micro-LED components are very small, their bonding to the drive circuit substrate and colorization technology are the core technical probl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/20H01L33/50
CPCH01L27/15H01L33/20H01L33/50H01L2933/0041
Inventor 周雄图翁雅恋张永爱郭太良严群叶芸
Owner FUZHOU UNIV