Wide-spectrum optical power beam splitter and power distribution method

Abstract

The invention provides a wide-spectrum optical power beam splitter and a power distribution method. The splitter includes a first waveguide and a second waveguide, an interaction zone is formed between the first waveguide and the second waveguide, and the interaction zone is a graphene waveguide action zone which is used for adjusting the optical conductivity of a graphene layer by adjusting the voltage of the graphene waveguide action zone to adjust output power. The wide-spectrum optical power beam splitter can change the ratio of the optical power of an output port, achieve on-chip reconstruction, and is small in size and wide in working range.

Description

Technical field [0001] The invention relates to the field of optoelectronic integration technology, in particular to a broad-spectrum optical power beam splitter and a power distribution method. Background technique [0002] The optical power beam splitting device is one of the important unit devices in the integrated optical subsystem. At present, the optical power splitting of the system-on-chip is mainly realized by the multimode interference coupler (Multimode Interference, MMI). Through the structural design of the multimode interference area, the self-image effect of the multimode waveguide can be used in a smaller device size. Realize a fixed ratio of optical power beam splitting device. The traditional multi-mode interference coupler achieves the power splitting function by etching the silicon waveguide in the multi-mode interference area to different degrees and changing the ratio of the optical power of the self-image point. However, once this type of structure is man...

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Problems solved by technology

Thermal adjustment mainly applies the thermo-optic effect of silicon, and changes the refractive index by changing the temperature of the device structure. This method has a slow response speed and poor controllability.

Since silicon is a central inversion symmetric crystal, its first-order electro-optic coefficient is 0 and the high-order electro-optic effect is very weak, the electrical adjustment of the refractive index is mainly performed through the plasma dispersion effect of doped silicon, and the doping of free carriers will It leads to additional device loss, and using it as a splitting device greatly increases the cost of power consumption, so it is not suitable for optical power splitting structures

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