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Defect scanning method and scanning device for semiconductor device

A defect scanning and scanning device technology, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve problems such as slow speed, and achieve the effect of simple device, fast and high-precision focusing

Active Publication Date: 2020-07-24
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing defect measurement equipment relies on a good imaging lens, and the current flat field of view 10 is about 30 microns × 30 microns, such as figure 1 As shown in the figure on the right, figure 1 The figure on the right side of the center is a partially enlarged picture of the figure on the left. If this lens is used to scan and detect an exposure area of ​​20: 26mm×33mm, it will take about 1 million photos, and the speed is very slow. If you take a photo + move, it takes 0.5 seconds, it takes 500,000 seconds, or 139 hours, to capture the entire exposure area

Method used

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  • Defect scanning method and scanning device for semiconductor device
  • Defect scanning method and scanning device for semiconductor device
  • Defect scanning method and scanning device for semiconductor device

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Embodiment 1

[0084] The defect scanning method of the present invention is described in detail below with reference to the accompanying drawings; figure 2 shows a process flow diagram of the defect scanning method of the present invention; Figures 3A-3C A schematic structural view of the microlens array of the present invention is shown; Figures 4A-4B A schematic diagram of the working principle of the microlens array of the present invention is shown; Figure 5 A schematic diagram showing the principle of coherence of the microlens array of the present invention; Figure 6 It shows a schematic diagram of the step-by-step alignment of the microlens array of the present invention; Figure 7 A schematic diagram of precise alignment of the microlens array of the present invention is shown.

[0085] The invention provides a defect scanning method of a semiconductor device, such as figure 2 As shown, the main steps of the method include:

[0086] Step S1: providing a wafer to be inspec...

Embodiment 2

[0134] The present invention also provides a defect scanning device for a semiconductor device, the scanning device comprising:

[0135] A microlens array, arranged above the wafer to be inspected, for imaging the wafer to be inspected;

[0136] The focusing device is arranged on the edge of the micro-lens array, and is used to focus the micro-lens array within the range of the detection distance step by step through wide-spectrum light source interferometry.

[0137] Wherein the wafer to be inspected may be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP, InGaAs or other III / V compound semiconductors, including these semiconductors The multi-layer structure composed of silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon-germanium-on-insulator (SiGeOI) and germanium-on-insulator (GeOI) )Wait.

[0138] Wherein, various devices can be formed in the wafer to be inspected, for exampl...

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Abstract

The invention relates to a defect scanning method and scanning device of a semiconductor device. The method comprises the following steps: providing a wafer to be detector; setting a micro lens arrayabove the wafer to be detected; adopting a broadband light source interference method to focus the micro lens array within a detection distance range; and imaging the wafer to be detector and detecting whether the semiconductor device is defected according to the imaging. The micro lens array is selectively used for imaging, the measuring speed can be greatly improved, and moreover, the broadbandlight source interference focusing method is selectively used for focusing the micro lens array within a detection distance range, so that full-array rapid high-precision focusing is effectively completed, and the accuracy and speed of defect scanning are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a defect scanning method and a scanning device of a semiconductor device. Background technique [0002] As processes improve, many of the problems that lead to chip failures are caused by very small defects that typically require the use of a scanning electron microscope (SEM), focused ion beam (FIB) or transmission electron microscopy. Auxiliary tools such as a microscope (Transmission electron microscope, TEM) perform scanning imaging to find the location of the defect for improvement. [0003] Existing defect measurement equipment relies on a good imaging lens, and the current flat field of view 10 is about 30 microns × 30 microns, such as figure 1 As shown in the figure on the right, figure 1 The figure on the right side of the center is a partially enlarged picture of the figure on the left. If this lens is used to scan and detect an exposure area of ​​20: 26mm×33mm...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 刘玄伍强刘畅陈思思
Owner SEMICON MFG INT (SHANGHAI) CORP