Thin film transistor, method for producing the same, and display device
A technology of thin-film transistors and semiconductors, which is applied in the direction of transistors, electric solid-state devices, semiconductor devices, etc., can solve the problem of small passivation layer capacitance, etc., and achieve the effects of reducing power consumption, significant energy saving effect, and high energy efficiency ratio
Inactive Publication Date: 2021-04-06
BOE TECH GRP CO LTD
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Problems solved by technology
However, because the gate insulating layer is too thick, the capacitance of the passivation layer is too small, and a voltage greater than 1V is required to turn on the thin film transistor.
Method used
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[0041] In order to further understand the present invention, the preferred embodiments of the present invention are described below in conjunction with examples, but it should be understood that these descriptions are only to further illustrate the features and advantages of the present invention, rather than limiting the claims of the present invention.
[0042] This embodiment discloses a thin film transistor, which includes a gate, a gate insulating layer, a semiconductor layer, a source and a drain, and also includes a photoelectric conversion layer in contact with the gate, and the photoelectric conversion layer is used for An induced potential is generated in the environment.
[0043] The thin film transistor of the present invention may be a thin film transistor with a top gate structure, or a thin film transistor with a bottom gate structure.
[0044] The thin film transistor of the present invention includes the arrangement of general film layers, such as gate, gate i...
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Abstract
The invention relates to the display field, in particular to a thin film transistor, a preparation method thereof and a display device. The thin film transistor of the present invention includes a photoelectric conversion layer in contact with the gate, and the photoelectric conversion layer is used to generate an induced potential under a light environment. In the present invention, the photoelectric conversion layer generates an induced potential after receiving light, which can compensate the gate for voltage driving. Therefore, in actual operation, only a small external voltage is required to turn on the thin film transistor, and the energy saving effect is remarkable. When the thin film transistor is used in a display device, it can reduce the power consumption of the display device and achieve higher energy efficiency ratio.
Description
technical field [0001] The invention relates to the display field, in particular to a thin film transistor, a preparation method thereof and a display device. Background technique [0002] A thin film transistor is a field effect semiconductor device, which plays an important role especially in flat panel display devices. The thin film transistor includes several important components such as a substrate, a gate, a gate insulating layer, a semiconductor layer, and source and drain. According to the difference in the relative position of the gate and the semiconductor layer, it can be specifically divided into a thin film transistor with a top gate structure and a thin film transistor with a bottom gate structure. With the development of display technology towards high resolution, large size and high frame rate, there are higher requirements for the driving capability of thin film transistors. [0003] At present, the driving mode of the thin film transistor is to drive the g...
Claims
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IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/65H10K30/50Y02E10/549H01L29/4908H01L29/7869Y02P70/50H01L29/786H10K30/10H10K30/81H10K10/462
Inventor 刘松温钰孙建明李正亮马啸尘胡合合张文林杜建华宁策
Owner BOE TECH GRP CO LTD