Power semiconductor device drive device and system with data acquisition function

A technology of power semiconductors and data acquisition, which is applied in the direction of electrical components, pulse technology, electronic switches, etc., can solve the problems of inability to collect IGBT operating state data, low intelligence, and inability to communicate and exchange data in real time with the upper computer, so as to shorten the hardware The effect of improving the development cycle, improving applicability, and simplifying the amount of tasks

Active Publication Date: 2021-12-24
CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the object of the present invention is to provide a power semiconductor device drive device and system with data acquisition function, which solves the problem that the existing traditional IGBT drive has low intelligence, only has conventional drive and protection functions, and cannot operate the IGBT. The technical problem of collecting status data and not being able to exchange data with the host computer in real time

Method used

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  • Power semiconductor device drive device and system with data acquisition function
  • Power semiconductor device drive device and system with data acquisition function
  • Power semiconductor device drive device and system with data acquisition function

Examples

Experimental program
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Embodiment 1

[0054] as attached figure 1 As shown, a specific embodiment of a power semiconductor device driving system with a data acquisition function includes: a driving board 1 , and an acquisition board 2 connected to the driving board 1 , a pulse board 3 and a detection board 4 . The lower stage of the driving board 1 is electrically connected to the detection board 4 and the power semiconductor device 5 , and the driving board 1 transmits the status information of the power semiconductor device 5 collected by the detection board 4 to the collection board 2 . The upper level of the drive board 1 is connected to the acquisition board 2 and the pulse board 3, and the drive board 1 receives the PWM pulse signal sent by the pulse board 3, and provides the power semiconductor device 5 with a turn-on or turn-off drive signal according to the PWM pulse signal (for IGBT Said to be the gate drive signal). The drive board 1 further includes a detection circuit. The drive board 1 obtains the f...

Embodiment 2

[0057] as attached image 3 As shown, a specific embodiment of a power semiconductor device driving device with a data acquisition function has the functions of realizing the isolation of the main circuit and the control unit, processing the PWM pulse signal, and performing power amplification and driving on the switching signal of the power semiconductor device 5 , and perform functions such as reliable protection on the power semiconductor device 5 . The power semiconductor device drive device specifically includes:

[0058] A control unit 11 , a data acquisition unit 12 , a pulse signal receiving and fault feedback unit 13 and a driving unit 14 are arranged on the driving board 1 . The control unit 11 is connected to the data acquisition unit 12 , the pulse signal receiving and fault feedback unit 13 , and the driving unit 14 respectively.

[0059] Under the control of the control unit 11 , the data acquisition unit 12 acquires the status information of the power semicond...

Embodiment 3

[0069] as attached figure 2 As shown, on the basis of Embodiment 2, one drive board 1 further drives two power semiconductor devices 5 simultaneously. as attached Figure 4 As shown, the detection board 4 further includes a first detection board 41 and a second detection board 42, and the first detection board 41 and the second detection board 42 respectively collect the operation status information of a power semiconductor device (ie, the IGBT in the figure) 5 . The control unit 11 further includes a first control unit 111 and a second control unit 112, the data acquisition unit 12 further includes a first data acquisition unit 121 and a second data acquisition unit 122, and the pulse signal receiving and fault feedback unit 13 further includes a first pulse signal The signal receiving and fault feedback unit 131 and the second pulse signal receiving and fault feedback unit 132 , the drive unit 14 further includes a first drive unit 141 and a second drive unit 142 .

[007...

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Abstract

The invention discloses a power semiconductor device drive device and system with data acquisition function. The data acquisition unit acquires the status information of the power semiconductor device collected from an external detection board under the control of a control unit. The control unit transmits the status information of the power semiconductor device collected by the data acquisition unit to an external acquisition board. The control unit receives the pulse signal from the external pulse board through the pulse signal receiving and fault feedback unit, processes the pulse signal and then sends the driving signal to the external power semiconductor device through the driving unit. The control unit transmits the fault signal of the power semiconductor device to the pulse board through the pulse signal receiving and fault feedback unit. The present invention can solve the technical problems that the existing driving device and system have low intelligence, only have conventional driving and protection functions, cannot collect the operating state data of power semiconductor devices, and cannot communicate and exchange data with the upper computer in real time.

Description

technical field [0001] The invention relates to the technical field of power semiconductors, in particular to an intelligent power semiconductor device driving device and system with data acquisition function. Background technique [0002] As a widely used power semiconductor device, since the advent of IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) in the 1980s, with its high switching speed, low saturation voltage drop, large current carrying capacity and many other Superiority, it will soon replace GTO (Gate Turn-Off Thyristor, the abbreviation of Gate Turn-Off Thyristor), and become the core device in the fields of rail transportation, industrial transmission, new energy and other fields. With the continuous improvement and development of IGBT power density, switching speed, and voltage level, the development of IGBT application technology is also changing with each passing day. [0003] The core of IGBT application technology is IGBT drive ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/567
CPCH03K17/567
Inventor 杨乐乐杨涛李彦涌谢舜蒙魏海山欧阳柳唐威张东辉蒋林马龙昌
Owner CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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