Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

HDR image sensor pixel structure and imaging system supporting multiple exposure modes

An image sensor and pixel structure technology, applied in the field of image sensors, can solve the problem that the pixel structure cannot support multiple exposure modes, etc., and achieve the effect of high dynamic range characteristics

Active Publication Date: 2021-01-05
思特威(上海)电子科技股份有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide an HDR image sensor pixel structure and imaging system supporting multiple exposure modes, so as to solve the problem that the existing pixel structure cannot support multiple exposure modes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • HDR image sensor pixel structure and imaging system supporting multiple exposure modes
  • HDR image sensor pixel structure and imaging system supporting multiple exposure modes
  • HDR image sensor pixel structure and imaging system supporting multiple exposure modes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] see figure 1 ,Such as figure 1 As shown, the HDR image sensor pixel structure supporting multiple exposure modes provided by the embodiment of the present invention includes a photodiode pd for accumulating charges generated by the photoelectric effect in response to incident light, the photodiode has a first terminal and a second terminal, The first terminal is connected to the ground terminal, and the second terminal is respectively coupled to the floating diffusion node FD through two branches, one of which is a rolling exposure transmission unit, and the other branch is a global exposure transmission unit; in this embodiment , the rolling exposure transfer unit is a rolling exposure transfer transistor RTX, and the second terminal of the photodiode pd is coupled to the floating diffusion node FD through the rolling exposure transfer transistor RTX. The global exposure transfer unit includes a global exposure transfer transistor GTX, an exposure control transistor S...

Embodiment 2

[0136] see Image 6 ,Such as Image 6 As shown, compared with Embodiment 1, in the HDR image sensor pixel structure supporting multiple exposure modes provided by the embodiment of the present invention, the storage capacitor Cm and the double conversion gain capacitor Cdcg are both parasitic capacitances. Specifically, the storage capacitor Cm is The parasitic capacitance of the exposure control transistor SSG, the dual conversion gain capacitor Cdcg is the parasitic capacitance of the connection point of the reset transistor RST and the dual conversion gain control transistor DCG to ground. Apart from this, other aspects of this embodiment are the same as those of Embodiment 1, and will not be repeated here. Of course, it should be appreciated that it can also be set that the storage capacitor Cm is a parasitic capacitance, and the dual conversion gain capacitor Cdcg is a separate capacitor, or the storage capacitor Cm is a separate capacitor, and the double conversion gain...

Embodiment 3

[0138] see Figure 7 ,Such as Figure 7 As shown, the HDR image sensor pixel structure supporting multiple exposure modes provided by this embodiment includes a photodiode pd, a reset transistor RST, and a dual conversion gain control unit; wherein, the photodiode pd is used to accumulate the charge generated by the photoelectric effect in response to the incident light, the photodiode pd has a first terminal and a second terminal, the first terminal is connected to the ground terminal, and the second terminal is coupled to the floating diffusion node FD through a rolling exposure transfer unit, specifically, the rolling exposure transfer unit is a rolling exposure transfer transistor RTX. A first terminal of the reset transistor RST is coupled to a first voltage source Vrab, and a second terminal thereof is coupled to a floating diffusion node FD through a dual conversion gain control unit; wherein the first voltage source Vrab is an independent voltage source. Specifically...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an HDR image sensor pixel structure and imaging system supporting multiple exposure modes. One end of the reset transistor of the pixel structure is coupled to a first voltage source, and the other end is coupled to a floating voltage source through a dual conversion gain control unit. Diffusion node; its photodiode is coupled to the floating diffusion node through the rolling exposure transfer unit; at the same time, the photodiode is also coupled to the floating diffusion node through the global exposure transfer unit or coupled to the dual conversion gain control unit and the reset transistor node. Due to the use of two exposure mode transfer units to transfer charges, the pixel structure of the present invention can support multiple exposure modes, and due to the use of dual conversion gain control units, the pixel structure of the present invention can support DCG, thus having high dynamic Range properties.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to an HDR image sensor pixel structure and an imaging system supporting multiple exposure modes. Background technique [0002] In recent years, the CMOS image sensor industry has developed rapidly, and the chip area of ​​the image sensor has become smaller and smaller. With the reduction of the pixel size, it is necessary for the image sensor to perform in a wide range of lighting conditions (from low light conditions to bright light conditions). requirements become more difficult to achieve. This performance capability is often referred to as having high dynamic range imaging (HDR). In conventional image capture devices, a pixel unit requires multiple sequential exposures to achieve HDR. [0003] In order to improve the dynamic range of the image sensor, various new pixel unit structures have been proposed. However, the existing pixel unit structures generally only support ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374H04N5/378H04N5/369H04N5/355
CPCH04N25/57H04N25/70H04N25/76H04N25/75
Inventor 张正民莫要武徐辰任冠京高哲谢晓邵泽旭马伟剑石文杰
Owner 思特威(上海)电子科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com