Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Image sensor pixel structure and imaging system immune to LED light source flicker

An image sensor and LED light source technology, which is applied in the field of image sensors, can solve the problems of not being able to adapt to LED light source flickering, and achieve the effects of avoiding the loss of LED light source information, preventing overexposure, and high dynamic range characteristics

Active Publication Date: 2021-06-29
思特威(上海)电子科技股份有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide an image sensor pixel structure and imaging system that are immune to LED light source flicker, so as to solve the problem that the existing pixel structure cannot adapt to LED light source flicker

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image sensor pixel structure and imaging system immune to LED light source flicker
  • Image sensor pixel structure and imaging system immune to LED light source flicker
  • Image sensor pixel structure and imaging system immune to LED light source flicker

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] see figure 1 ,Such as figure 1 As shown, the image sensor pixel structure immune to LED light source flicker provided by the embodiment of the present invention includes a large-area photodiode pd_1 and a small-area photodiode pd_s for accumulating charges generated by the photoelectric effect to respond to incident light, wherein the large-area photodiode pd_s The first terminal of the diode pd_1 is connected to the ground terminal, and the second terminal thereof is coupled to the floating diffusion node FD through the first transfer transistor LTX, wherein the first terminal of the large-area photodiode pd_1 is an anode terminal, and its second terminal is a cathode terminal. The first terminal of the small-area photodiode pd_s is connected to the ground terminal, and the second terminal thereof is coupled to the first voltage source PIXVDD through the first control transistor AB. And the small-area photodiode pd_s is also coupled to the floating diffusion node FD t...

Embodiment 2

[0093] see Figure 4 ,Such as Figure 4 As shown, compared with Embodiment 1, in the image sensor pixel structure immune to LED light source flicker provided by the embodiment of the present invention, the first storage capacitor Cmb, the second storage capacitor Cmc and the double conversion gain capacitor Cdcg are all parasitic capacitances, Specifically, the first storage capacitor Cmb is the parasitic capacitance of the first exposure control transistor SGb, the second storage capacitor Cmb is the parasitic capacitance of the second exposure control transistor SGb, the dual conversion gain capacitor Cdcg is the reset transistor RST and the dual conversion gain control transistor The parasitic capacitance of the connection point of DCG to ground. Apart from this, other aspects of this embodiment are the same as those of Embodiment 1, and will not be repeated here. Of course, it should be appreciated that any one or both of the first storage capacitor Cmb, the second stora...

Embodiment 3

[0095] see Figure 5 ,Such as Figure 5 As shown, this embodiment provides an imaging system 100, including a pixel array 110, the pixel array 110 is arranged in rows and columns, and the structure of each pixel in the pixel array 110 can be the embodiment 1 to embodiment 2 For any one of the pixel structures, please refer to Embodiment 1 to Embodiment 2 for details of the pixel structure, which will not be repeated here.

[0096] In addition, as an exemplary embodiment, the imaging system further includes a logic control unit 120, a drive unit, a column A / D conversion unit 150, and an image processing unit 160; wherein:

[0097] The logic control unit 120 is used to control the working sequence logic of the whole system;

[0098] One end of the drive unit is connected to the logic control unit 120, and the other end is coupled to the pixel array 110 for driving and controlling each control signal line in the pixel array 110; specifically, the drive unit includes a row drive...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an image sensor pixel structure immune to LED light source flicker and an imaging system. One end of the reset transistor of the pixel structure is coupled to a first voltage source, and the other end is coupled to a floating diffusion via a double conversion gain control unit. node; its large-area photodiode is coupled to the floating diffusion node through the first transfer transistor, its small-area photodiode is coupled to the first voltage source through the first control transistor, and the other way is through the first exposure transfer unit and the second exposure A parallel circuit of transfer cells is coupled to the floating diffusion node. Due to the combination of two photodiodes with different sizes, the continuous exposure of the large-area photodiode is used to capture weak light information, and the intermittent exposure of the small-area photodiode is used to capture the LED light source signal (high-brightness signal), so that the pixel structure It can not only prevent overexposure, but also avoid the loss of LED light source information, and can completely retain the LED signal.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to an image sensor pixel structure immune to LED light source flicker and an imaging system. Background technique [0002] LED light sources are more and more widely used in various fields. Since LED light sources are driven by pulse voltage, the brightness will flicker at a frequency that cannot be detected by human eyes. The image sensor is an important information acquisition component in an intelligent system. When a traditional image sensor is shooting an object containing an LED light source, if the exposure time is too long, the image will be overexposed, and if the exposure time is too short, the brightness information of the light source may be lacking. These will cause damage to the LED light source. Misjudgment of information, such as traffic lights, car taillights, etc., may cause major accident losses. [0003] Therefore, it is necessary to provide a correspondin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/353H04N5/355H04N5/369
CPCH04N25/534H04N25/57H04N25/70
Inventor 任冠京莫要武徐辰张正民高哲谢晓邵泽旭马伟剑石文杰
Owner 思特威(上海)电子科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com