On-batch silicon wafer lining treatment device in sputtering process

Abstract

The invention discloses an on-batch silicon wafer lining treatment device in a sputtering process. The on-batch silicon wafer lining treatment device comprises a holding tray, wherein the holding trayis used for holding silicon wafers; a plurality of heating holes are formed in the bottom end surface of the holding tray; the heating holes are communicated with a heating pipeline outside the holding tray; the heating pipeline is connected with a heating source; a filtering net which extends upwards in a horizontal direction is arranged in the holding tray; a support frame is arranged at a sidepart of the filtering net; the support frame is fixedly arranged on a side end surface of the holding tray; and a plurality of vibration motors are arranged at the bottom end part of the support frame. By adopting the on-batch silicon wafer lining treatment device in the sputtering process of the technical scheme of the invention, the vibration motors below the filtering net are capable of driving the filtering net to vibrate to uniformly distribute on-batch silicon wafers on the filtering net, the situation that the efficiency is degraded since the silicon wafers need to be placed uniformlymanually in the on-batch silicon wafer treatment process can be avoided, and moreover, the heating uniformity of the on-batch silicon wafers can be improved in the production process.

Description

technical field [0001] The invention relates to a semiconductor processing equipment, in particular to a batch silicon chip substrate processing device in a sputtering process. Background technique [0002] During the sputtering process of silicon wafers used in semiconductor production, the silicon wafer substrate needs to be heated. The existing heating process often adopts the back spray process, that is, the silicon wafer is placed inside the container, and the heating gas is sent to the silicon wafer through the heating hole at the bottom of the container, so that the silicon wafer substrate can be heated; however, when the above process is processed, if Substrate heating involving batches of silicon wafers needs to be placed evenly manually to prevent the silicon wafer substrate from being in contact with the heating medium, resulting in a reduction in production efficiency. Contents of the invention [0003] The technical problem to be solved by the present inventi...

AI Technical Summary

Problems solved by technology

The existing heating process often adopts the back spray process, that is, the silicon wafer is placed inside the container, and the heating gas is sent to the silicon wafer through the heating hole at the bottom of the container, so that the silicon wafer substrate can be heated; however, when the above process is processed, if Substrate heating involving batches of silicon wafers needs to be placed evenly manually to prevent the silicon wafer substrate from being in contact with the heating medium, resulting in a reduction in production efficiency

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