Lifetime pre-sorting method for insulated gate bipolar transistors

Abstract

The invention provides a method for pre-sorting service life of insulated gate bipolar transistors, relating to a detection method for transistors. The present invention includes the steps: A: according to the IGBT ride-through characteristics, find the intersection point of the ride-through characteristic curves at different temperatures, and define the driving voltage corresponding to the point as the ride-through point gate voltage V Cross ; B: For the tested batch of IGBT products, select samples with V Cross To drive the voltage, carry out the IGBT accelerated aging test, use the short-circuit test circuit to record the short-circuit current during the module test, determine the functional relationship between the IGBT short-circuit current and the number of accelerated cycles according to the test results, and record the corresponding time when all the bonding wires are broken. The number of acceleration cycles; C: the number of cycles of the IGBT module to be tested is N s After the accelerated aging test is completed, the remaining life of the module is calculated using the established functional relationship between the IGBT short-circuit current and the number of accelerated cycles, and the module is screened according to the specific requirements of the remaining life. To achieve the purpose of estimating the remaining life of IGBT with a small number of samples.

Description

technical field [0001] The invention relates to a method for detecting transistors, in particular to a method for pre-sorting service life of insulated gate bipolar transistors. Background technique [0002] Power semiconductor devices are the core components of modern power electronic conversion devices. With the continuous development of high-power power electronics technology, the performance requirements of semiconductor devices in modern industry are increasing day by day. The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) has the advantages of high input impedance of MOSFET and low turn-on voltage drop of GTR, and has low power consumption under voltage control, simple control circuit, high voltage resistance, and High current and other characteristics are widely used in high-power power electronic equipment. [0003] In IGBT industrial applications, because it works in the switching state, its service life is lower than that of passive d...

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Problems solved by technology

[0005] However, the life model established by the first type of research method does not involve the specific failure mechanism of the power IGBT, and does not consider the thermal fatigue failure caused by the temperature fluctuation inside the device in the actual working condition

On the other hand, this type of method is based on the same model of IGBT module parameters, and cannot realize the life prediction of a single module

The second type of method, that is, the accelerated aging test, although the complete life of the IGBT can be obtained more accurately, the modules that have passed the accelerated aging test have been scrapped and cannot be used in practical applications.

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