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Three-dimensional memory and manufacturing method thereof

A manufacturing method and memory technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of development technology limit, storage electron density limit, etc., and achieve the effect of improving electrical performance, saving space, and reducing chip size

Active Publication Date: 2018-08-24
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits, etc.

Method used

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  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof

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Embodiment Construction

[0042] Embodiments and modified examples of the three-dimensional memory and its manufacturing method according to the present invention will be described below based on the drawings, and the same or corresponding components and locations will be described with the same reference numerals in each of the drawings.

[0043] This application uses certain words to describe the embodiments of the application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that two or more references to "an embodiment" or "an embodiment" or "an alternative embodiment" in different places in this specification do not necessarily refer to the same embodiment . In addition, certain features, structures or characteristics of one or more embodiments of the present application may be properly combined.

[0044] It s...

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Abstract

The invention provides a three-dimensional memory and a manufacturing method of the three-dimensional memory. The three-dimensional memory comprises a core storage circuit and a peripheral circuit. Atleast one storage string is formed in the core storage circuit. The three-dimensional memory also comprises a substrate, wherein the peripheral circuit is formed on the substrate; a common source electrode line layer which is formed on the peripheral circuit and electrically connected with the peripheral circuit; and a doped semiconductor material layer which is formed on the common source electrode line layer, wherein the core storage region is arranged on the semiconductor material layer.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a three-dimensional memory and a method for manufacturing the three-dimensional memory. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered in planar flash memory and to seek lower production costs per unit storage unit, various three-dimensional memory structures emerged as the times require, and solve the problem of 2D or planar NAND by stacking memory particles together. Limitations imposed by flash memory. [0003] A three-dimensional memory, such as a memory cell of 3D NAND, includes alternately deposited conductive layer...

Claims

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Application Information

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IPC IPC(8): H01L27/115H01L27/11582H01L27/1157H01L27/11573H10B69/00H10B43/27H10B43/35H10B43/40
CPCH10B69/00H10B43/35H10B43/40H10B43/27
Inventor 刘峻霍宗亮
Owner YANGTZE MEMORY TECH CO LTD
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