Check patentability & draft patents in minutes with Patsnap Eureka AI!

SRAM memory and formation method

A memory and latch technology, applied in the direction of electric solid state devices, semiconductor devices, electrical components, etc., can solve problems such as poor electrical performance of static random access memory, and achieve the effect of improving speed

Inactive Publication Date: 2018-08-31
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the electrical performance of SRAM in the prior art is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SRAM memory and formation method
  • SRAM memory and formation method
  • SRAM memory and formation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] As mentioned in the background, the electrical performance of the SRAM memory formed in the prior art is relatively poor.

[0033] figure 1 It is a circuit diagram of a SRAM memory unit, the SRAM memory unit includes a pass transistor, a pull-up transistor and a pull-down transistor, the pass transistor includes: a first pass transistor PG1 and a second pass transistor PG2, and the pull-up transistor includes a first A pull-up transistor PU1 and a second pull-up transistor PU2. The pull-down transistor includes a first pull-down transistor PD1 and a second pull-down transistor PD2. The pull-up transistor and the pull-down transistor form a latch. For the connection relationship of the transfer transistor, pull-up transistor and pull-down transistor, refer to figure 1 .

[0034]When reading data "0", the current in PD1 must be greater than the current in PG1, otherwise the data "0" cannot be read correctly; when writing data "0", the current in PG1 must be greater than...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A SRAM memory and a formation method are disclosed. The method comprises the following steps of providing a substrate; forming a transmission transistor, wherein the method of forming the transmissiontransistor includes: forming a transmission grid structure on the substrate; the substrate of the bottom of the transmission grid structure possesses a channel region; and the transmission grid structure has a first side and a second side which are opposite to each other; forming a first stress layer in the substrate of the first side of the transmission grid structure, wherein a first distance is arranged between the bottom surface of the first stress layer and the bottom surface of the transmission grid structure; and forming a second stress layer in the substrate of the second side of thetransmission grid structure, wherein the materials of the second stress layer and the first stress layer are the same, a second distance is arranged between the bottom surface of the second stress layer and the bottom surface of the transmission grid structure, and the second distance is less than the first distance. By using the method, the electrical performance of the SRAM memory is increased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an SRAM memory and a forming method thereof. Background technique [0002] With the continuous development of semiconductor technology, memory presents a development trend of high integration, high speed, and low power consumption. [0003] Functionally, memory is divided into random access memory (RAM, Random Access Memory) and read-only memory (ROM, Read Only Memory). When the random access memory is working, data can be read from any specified address at any time, and data can also be written to any specified storage unit at any time. The read and write operation of the random access memory is convenient and the use is flexible. [0004] Random access memory can be divided into static random access memory (SRAM) and dynamic random access memory (DRAM). Among them, SRAM utilizes flip-flops with positive feedback to store data, and mainly relies on continuous power ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/11H01L29/06H01L29/78
CPCH01L29/0603H01L29/7842H10B10/12
Inventor 甘正浩冯军宏
Owner SEMICON MFG INT (SHANGHAI) CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com