A power semiconductor module packaging structure and packaging method
A power semiconductor and module packaging technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the difficulty in processing anti-corrosion films or coatings, increase the size of power modules, and unfavorable product size issues such as miniaturization, to achieve the effects of small deformation, low module thermal resistance, and high reliability
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[0059] The specific embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings of the specification.
[0060] The present invention designs a power semiconductor module packaging structure. In practical applications, it specifically includes a metal bottom plate 2, a base layer, a power semiconductor chip 3, and a metal bonding wire 4; the base layer includes a thermally conductive insulating resin film 11 and a metal circuit layer 12. Wherein, the thermally conductive insulating resin film 11 contains boron nitride fillers, the metal circuit layer 12 is provided on the upper surface of the thermally conductive insulating resin film 11, the lower surface of the thermally conductive insulating resin film 11 is provided on the upper surface of the metal base plate 2, and the power semiconductor chip 3 Set on the upper surface of the metal circuit layer 12; one end of the metal bonding wire 4 is connected to the upper ...
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