A kind of flexible amoled structure and preparation method
A flexible and connecting structure technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of metal wire cracking, easy cracking of inorganic film layers, etc., to achieve the effect of ensuring reliability
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Embodiment 1
[0040] Such as figure 1 and figure 2 As shown, the present embodiment relates to a flexible AMOLED structure, including: a semiconductor substrate 100 provided with a display area, a bridging area, and an external pin bonding area, and the bridging area is located between the display area and the external pin bonding area , the PI film 101 arranged on the semiconductor substrate 100, several metal unit layers 102 (metal lines) arranged on the PI film 101 in the outer pin bonding area and the bridge area in turn, and arranged in the display area and the bridge Several inorganic film layers 103 (103') on the PI film 101 in the region (this inorganic film layer plays the role of buffering and resisting water and oxygen intrusion, also can be referred to as buffer layer (buffer-layer)) and through setting Several connecting structures 104 in each inorganic film layer 103 (103') in the bridging area, a TFT layer 105 disposed on the uppermost inorganic film layer 103 (103'), an OL...
Embodiment 2
[0047] Such as image 3 As shown, this embodiment relates to a method for preparing a flexible AMOLED structure. Specifically, the method includes the following steps:
[0048] Step 1, providing a semiconductor substrate 200 provided with a display area, a bridging area and an external pin bonding area, and the bridging area is located between the display area and the external pin bonding area, preferably, the above-mentioned semiconductor substrate 200 for glass substrates, such as Figure 4a structure shown.
[0049] Step 2, coating the PI film 201 on the semiconductor substrate 200, since coating the PI film 201 on the semiconductor substrate 200 is not the focus of the improvement of the present invention, it will not be described in detail here, as Figure 4b structure shown.
[0050] Step 3, preparing a metal unit layer 202' covering the upper surface of the PI film 201 of the outer pin bonding area and part of the bridging area, such as Figure 4c and 4d structure ...
Embodiment 3
[0069] Such as Figure 5 As shown in the structure, this embodiment relates to a flexible AMOLED structure, including: a semiconductor substrate provided with a display area, a bridging area, and an external pin bonding area, and the bridging area is located between the display area and the external pin bonding area The bottom 300, the PI film 301 arranged on the semiconductor substrate 300, the TFT layer 303 arranged on the PI film 301 in the display area and the bridge area, and the TFT layer 303 is provided with a metal data line (Date line, DL for short) ) 305, covering the upper surface of the PI film 301 of the outer pin bonding area, the planarization layer 304 whose upper surface is flush with the upper surface of the TFT layer 303, arranged in the display area and the bridging area, and located between the PI film 301 and the upper surface of the TFT layer 303 Several sequentially stacked inorganic film layers 302 / 302' between the TFT layers 303, at the position of th...
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Abstract
Description
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Application Information
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