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A kind of flexible amoled structure and preparation method

A flexible and connecting structure technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of metal wire cracking, easy cracking of inorganic film layers, etc., to achieve the effect of ensuring reliability

Active Publication Date: 2021-06-22
EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, in the Outer Lead Bonding (OLB) of flexible AMOLED display, when the metal traces are bent in the OLB area, the metal wires may be broken or disconnected. This is due to the current flexible AMOLED structure The inorganic film layer above and below the metal wire has a relatively thick thickness, and the inorganic film layer is easy to crack when it is bent, and the fracture strain limit of the metal itself is about 1%. When the bending radius is small, it is at a certain thickness. The extension of the metal wire above the inorganic film layer will exceed the limit, resulting in cracking of the metal wire, which is not expected by those skilled in the art

Method used

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  • A kind of flexible amoled structure and preparation method
  • A kind of flexible amoled structure and preparation method
  • A kind of flexible amoled structure and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Such as figure 1 and figure 2 As shown, the present embodiment relates to a flexible AMOLED structure, including: a semiconductor substrate 100 provided with a display area, a bridging area, and an external pin bonding area, and the bridging area is located between the display area and the external pin bonding area , the PI film 101 arranged on the semiconductor substrate 100, several metal unit layers 102 (metal lines) arranged on the PI film 101 in the outer pin bonding area and the bridge area in turn, and arranged in the display area and the bridge Several inorganic film layers 103 (103') on the PI film 101 in the region (this inorganic film layer plays the role of buffering and resisting water and oxygen intrusion, also can be referred to as buffer layer (buffer-layer)) and through setting Several connecting structures 104 in each inorganic film layer 103 (103') in the bridging area, a TFT layer 105 disposed on the uppermost inorganic film layer 103 (103'), an OL...

Embodiment 2

[0047] Such as image 3 As shown, this embodiment relates to a method for preparing a flexible AMOLED structure. Specifically, the method includes the following steps:

[0048] Step 1, providing a semiconductor substrate 200 provided with a display area, a bridging area and an external pin bonding area, and the bridging area is located between the display area and the external pin bonding area, preferably, the above-mentioned semiconductor substrate 200 for glass substrates, such as Figure 4a structure shown.

[0049] Step 2, coating the PI film 201 on the semiconductor substrate 200, since coating the PI film 201 on the semiconductor substrate 200 is not the focus of the improvement of the present invention, it will not be described in detail here, as Figure 4b structure shown.

[0050] Step 3, preparing a metal unit layer 202' covering the upper surface of the PI film 201 of the outer pin bonding area and part of the bridging area, such as Figure 4c and 4d structure ...

Embodiment 3

[0069] Such as Figure 5 As shown in the structure, this embodiment relates to a flexible AMOLED structure, including: a semiconductor substrate provided with a display area, a bridging area, and an external pin bonding area, and the bridging area is located between the display area and the external pin bonding area The bottom 300, the PI film 301 arranged on the semiconductor substrate 300, the TFT layer 303 arranged on the PI film 301 in the display area and the bridge area, and the TFT layer 303 is provided with a metal data line (Date line, DL for short) ) 305, covering the upper surface of the PI film 301 of the outer pin bonding area, the planarization layer 304 whose upper surface is flush with the upper surface of the TFT layer 303, arranged in the display area and the bridging area, and located between the PI film 301 and the upper surface of the TFT layer 303 Several sequentially stacked inorganic film layers 302 / 302' between the TFT layers 303, at the position of th...

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Abstract

The present invention relates to the field of display technology, in particular to a flexible AMOLED structure and a preparation method thereof. No inorganic film layer or only a thinner inorganic material film is provided on the PI film in the outer pin bonding area, so that the outer lead The position of the neutral plane when the pin bonding area is bent is also changed, so that the reliability of the metal wire after the bending of the outer pin bonding area can be guaranteed. At the same time, because the metal wire located in the outer pin bonding area passes The contact hole located in the bridging area is connected to the display area, thereby avoiding the problem of OLED failure caused by the penetration of water and oxygen through the PI film.

Description

technical field [0001] The invention relates to the technical field of displays, in particular to a flexible AMOLED structure and a preparation method. Background technique [0002] The organic light emitting diode (Organic Light Emitting Diode, OLED) display technology uses an organic material coating, which has the characteristic of self-luminescence. The OLED display screen has a large viewing angle and saves power, and has been widely used. The biggest feature of OLED display devices is that they can realize flexible display. Lightweight, bendable and portable flexible display devices made of flexible semiconductor substrates are an important development direction of OLED display devices. [0003] At present, in the Outer Lead Bonding (OLB) of flexible AMOLED display, when the metal traces are bent in the OLB area, the metal wires may be broken or disconnected. This is due to the current flexible AMOLED structure The inorganic film layer above and below the metal wire ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/32
CPCH10K59/12H10K59/131H10K59/1201
Inventor 盛晨航潘新叶
Owner EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD