Vacuum pressure control device and microwave plasma chemical vapor deposition device
A technology of microwave plasma and chemical vapor deposition, which is applied in the direction of chemically reactive gases, chemical instruments and methods, and crystal growth, can solve the problems that the dynamic control accuracy of proportional valves cannot meet the requirements of ultra-vacuum, and the proportional valves are expensive. , to achieve the effects of stable pressure, cost saving and high control precision
Inactive Publication Date: 2018-09-11
FD3M公司
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Problems solved by technology
[0003] Plasma excitation is formed in the resonant cavity. The adjustment of the resonant cavity pressure is crucial to the quality of diamond synthesis. In the prior art, a proportional valve that can adjust the size of the spool is usually installed on the vacuum pipeline to control the resonant cavity pressure. The proportional valve can be Use such as MKS 0248A-00020RV, 250E-1-D, etc., and this proportional valve is expensive
In addition, the dynamic control accuracy of this proportional valve is difficult to meet the requirements of ultra-vacuum. For example, if the proportional valve accuracy is set to 20torr, 30torr, 50torr, 100torr, 150torr, the actual pressure is 24torr, 33torr, 53torr, 102torr, 152torr, and the error is 2torr about
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[0026] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0027] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...
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The present application discloses a vacuum pressure control device, comprising: at least one first vacuum line connected between a vacuuming port and a vacuum pump, each of the first vacuum lines being respectively provided with a valve; at least one second vacuum line connected between the vacuuming port and the vacuum pump, each of the second vacuum lines being respectively provided with a valveand a proportional valve, the proportional valve including a sealing plate and a through hole having a fixed diameter formed on the sealing plate. The present application also discloses a microwave plasma chemical vapor deposition device and application thereof. Adjustment under different pressures is achieved by designing the branches with small holes, on the other hand, a lot of cost can be saved, and on the other hand, the control precision is high and the pressure is stable.
Description
technical field [0001] The present application relates to the technical field of single crystal diamond synthesis, in particular to a vacuum pressure control device and a microwave plasma chemical vapor deposition device. Background technique [0002] Microwave plasma chemical vapor deposition (MPCVD) transmits the microwave generated by the microwave generator to the reactor with a waveguide, and feeds CH into the reactor 4 with H 2 The mixed gas, high-intensity microwave energy excites and decomposes the carbon-containing gas above the substrate to form active carbon-containing groups and atomic hydrogen, and forms a plasma, thereby depositing a diamond film on the substrate. [0003] Plasma excitation is formed in the resonant cavity. The adjustment of the resonant cavity pressure is crucial to the quality of diamond synthesis. In the prior art, a proportional valve that can adjust the size of the spool is usually installed on the vacuum pipeline to control the resonant ...
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Login to View More IPC IPC(8): C30B25/02C30B29/04
CPCC30B25/02C30B29/04
Inventor 马懿马修·L·斯卡林朱金华吴建新缪勇卢荻艾永干克里斯托弗·E·格里芬
Owner FD3M公司