NPNPN type bidirectional silicon controlled rectifier electrostatic protection device with high maintaining voltage

Abstract

The invention discloses an NPNPN type bidirectional silicon controlled rectifier electrostatic protection device with high maintaining voltage. The NPNPN type bidirectional silicon controlled rectifier electrostatic protection device with high maintaining voltage comprises a P type substrate, wherein an N type buried layer is arranged in the P type substrate; a first N type deep trap, a high voltage N trap and a second N type deep trap are arranged on the N type buried layer; a first N trap, a first P trap, a second N trap, a second P trap, a third N trap, a third P trap and a fourth N trap are arranged on the high voltage N trap; a first P+ injection region, a first N+ injection region and a second N+ injection region are arranged in the first P trap; and a third N+ injection region, a fourth N+ injection region and a second P+ injection region are arranged in the third P trap. The NPNPN type bidirectional silicon controlled rectifier electrostatic protection device with high maintaining voltage has the advantages that one P trap is added between two N traps, the thickness of the P trap is just exhausted with the N traps at the left side and the right side, an access with a certain resistance is formed, a bidirectional SCR structure can have one relatively high maintaining voltage after avalanche breakdown and breakover, and the problem that an electrostatic discharge device is locked due to low maintaining voltage after breakover is effectively prevented.

Description

technical field [0001] The invention relates to the field of electrostatic protection, in particular to a high sustain voltage NPNPN type bidirectional thyristor electrostatic protection device. Background technique [0002] Electro-Static Discharge (ESD) is an inevitable phenomenon in the process of manufacturing, packaging, testing, transportation, assembly and use of integrated circuits. There are internal factors and external factors in the generation of electrostatic discharge. Static electricity accounts for 58% of the various reasons for the failure of integrated circuits, which poses a serious threat to the reliability of integrated circuits. According to the causes of electrostatic discharge and the different ways of discharging integrated circuits, electrostatic discharge is usually divided into the following four modes: HBM (human body discharge mode), MM (machine discharge mode), CDM (component charge and discharge mode), FIM (electric field sensing mode). Amon...

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Problems solved by technology

Usually, the design of an ESD protection device needs to consider two aspects: one is that the ESD protection device must be able to discharge a large current;

The NNPPN bidirectional SCR device conducts due to strong conduction and maintains a very low voltage. When the circuit is working normally, it may be unable to be turned off due to static electricity, so that the circuit port maintains a very low voltage, which affects the operation of the core circuit.

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