Unlock instant, AI-driven research and patent intelligence for your innovation.

Edge exposure device, wafer structure and forming method of wafer structure

An edge exposure and wafer technology, which is applied in the photolithography process exposure device, microlithography exposure equipment, optics, etc., can solve the problem of low yield rate of the wafer structure, improve the stacking problem, improve the process surface, and reduce the quantity Effect

Active Publication Date: 2018-09-14
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, using the wafer edge exposure method for photoresist edge removal, the formed wafer structure still has the problem of low yield.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Edge exposure device, wafer structure and forming method of wafer structure
  • Edge exposure device, wafer structure and forming method of wafer structure
  • Edge exposure device, wafer structure and forming method of wafer structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] It can be seen from the background art that in the prior art, the wafer edge exposure method is used to perform photoresist edge removal treatment, and the formed semiconductor structure still has the problem of low yield. Combining with a wafer structure formation method using wafer edge exposure method for photoresist deedge processing, the reason for the low yield problem is analyzed:

[0019] In the back-end process of forming metal wiring and metal plugs, in order to provide better wafer edge flatness and improve the quality of subsequent metal wiring, no photoresist is used during the formation of contact holes. In the process of forming the metal connection, the edge removal treatment of the photoresist is carried out, so as to prevent the accumulated photoresist from affecting the graphics of other parts on the wafer.

[0020] Specifically, the method for forming the wafer structure includes: providing a wafer to be processed, the wafer to be processed includes ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an edge exposure device, a wafer structure and a forming method of the wafer structure. The edge exposure device comprises a light source, an optical fiber and a dimming unit,wherein the light source is used for generating lighting light; the optical fiber is connected with the light source and is used for transmitting the lighting light to form incident light which is projected to a photoresist layer on the edge of the wafer to perform exposure; and the dimming unit is used for adjusting the light intensity of the incident light which is projected to the photoresistlayer. The wafer structure is formed by utilizing the edge exposure device and the exposure intensity can be asset according to the material of the photoresist layer, so that protection on a film layer on the wafer edge area by the photoresist can be guaranteed and the flatness of the edge of the wafer is improved; furthermore, the problem that the photoresist is stacked in the edge area can be improved, the number of defects on the central area is reduced and the yield is increased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an edge exposure device, a wafer structure and a forming method thereof. Background technique [0002] With the reduction of critical dimensions of components and the increase of integrated circuit density, the defects generated in the photolithography process have an increasingly significant impact on device yield and performance. Among them, the cleaning and definition of the wafer boundary starts to become more important. During the photolithography process, photoresist is applied to the surface of the wafer by a spin-coating process. Near the edge of the wafer, the photoresist will accumulate, and the photoresist will accumulate on the upper and lower surfaces of the edge of the wafer. The accumulation of photoresist on the edge of the wafer will affect the coating uniformity of the photoresist, which cannot achieve better patterning, and is prone to peeling, whic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
CPCG03F7/2022G03F7/70425
Inventor 刘伟张书庆刘细桥
Owner SEMICON MFG INT (SHANGHAI) CORP
PatSnap Eureka logo

PatSnap Eureka turns technology decisions into work you can execute. Powered by our Innovation Knowledge Graph, it runs expert workflows across engineering, life sciences, materials and intellectual property. Get your review-ready output in minutes.

X (Twitter)LinkedInYouTubeSubstack

© 2026 PatSnap. All rights reserved. 

Terms of Service

 | 

Privacy policy

 | 

Modern Slavery Act Transparency Statement