Tray for patterning of sapphire substrate in dry etching

Abstract

The invention discloses a tray for patterning of a sapphire substrate in dry etching, and belongs to the field of manufacture of semiconductor LED substrates. The tray comprises an upper tray and a lower tray matched with the upper tray, wherein a plurality of substrate supporting units are arranged in the lower tray; each supporting unit bulges out of the surface of the lower tray, a supporting unit groove structure is arranged on the surface of the supporting unit, a plurality of cooing air holes are formed in the supporting unit, and the supporting unit comprises an arc part and a flat edgepart and is defined by the arc part and the flat edge part by cooperating; hollowed-out parts matched with the supporting units in shape are formed in the upper tray, and a plurality of press feet are arranged on the outer edges of the circumferences of the hollowed-out parts; the upper tray and the lower tray are in coupling connection through nuts and cooperate to fix a sapphire wafer between the supporting units of the lower tray and the press feet of the upper tray. The service life of the tray is prolonged effectively, and patterning uniformity of the sapphire substrate is improved.

Description

technical field [0001] The invention relates to a tray for a patterned sapphire substrate in dry etching, belonging to the field of semiconductor LED substrate production. Background technique [0002] The manufacturing methods of PSS are mainly divided into dry etching and wet etching. Among them, dry etching has the advantages of good anisotropy, high etching selectivity, fast etching rate, and easy control. Widely used by manufacturing companies, it mainly consists of main process steps such as wafer cleaning, coating, exposure, development, and dry etching. At present, most enterprises use ICP (inductively coupled plasma) etching machine, which has the characteristics of high anisotropy, fast etching rate, good uniformity and high process stability. [0003] The dry etching process generally uses a special tray to carry the sapphire wafer. During the etching process, the plasma bombards the sapphire wafer and reacts with the surface of the tray to corrode the tray. At t...

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Problems solved by technology

[0003] The dry etching process generally uses a special tray to carry the sapphire wafer. During the etching process, the plasma bombards the sapphire wafer and reacts with the surface of the tray to corrode the tray. At the same time, the design of the tray will greatly affect the patterning of the sapphire substrate. Uniformity of

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