Preparation method of directional growth CdZnTe film on graphene substrate

A graphene film, directional growth technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of difficult to achieve high resistance, low defects, disordered film, application impact, etc.

Active Publication Date: 2021-07-06
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The CdZnTe film prepared by the near-space sublimation method is a polycrystalline film, and the growth of the film is generally non-oriented and disorderly. Relatively speaking, it is difficult to achieve high resistance and low defects for such a film, which is very important for high-performance radiation detectors. applications affecting

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] In this embodiment, a preparation method for directionally growing a CdZnTe thin film on a graphene substrate comprises the following steps:

[0022] (1) Substrate preparation and pretreatment:

[0023] The substrate is prepared by CVD method, the specific method is as follows:

[0024] Clean the copper foil with acetone solution to remove organic impurities on the surface of the copper foil, then put the cleaned copper foil into the CVD growth chamber, feed argon gas to control the pressure to 340mTorr, and feed hydrogen gas at a flow rate of 20 sccm to heat to 1050°C and keep it for 30min, then remove the copper foil surface oxide, continue to keep the temperature constant, feed the mixed gas of methane and hydrogen at a flow rate of 8 sccm respectively for 20min, and control the volume fraction of hydrogen in the mixed gas in the CVD growth chamber to be 50%, the product generated on the copper foil is a single-layer graphene film; then stop feeding methane, and in ...

Embodiment 2

[0032]This embodiment is basically the same as Embodiment 1, especially in that:

[0033] In this embodiment, a preparation method for directionally growing a CdZnTe thin film on a graphene substrate comprises the following steps:

[0034] (1) Substrate preparation and pretreatment:

[0035] The substrate is prepared by CVD method, the specific method is as follows:

[0036] Clean the copper foil with acetone solution to remove organic impurities on the surface of the copper foil, then put the cleaned copper foil into the CVD growth chamber, feed argon gas to control the pressure to 340mTorr, and feed hydrogen gas at a flow rate of 20 sccm to heat to 1050°C and keep it for 30min, then remove the copper foil surface oxide, continue to keep the temperature constant, feed the mixed gas of methane and hydrogen at a flow rate of 8 sccm respectively for 20min, and control the volume fraction of hydrogen in the mixed gas in the CVD growth chamber to be 50%, the product generated on...

Embodiment 3

[0044] This embodiment is basically the same as the previous embodiment, and the special features are:

[0045] In this embodiment, a preparation method for directionally growing a CdZnTe thin film on a graphene substrate comprises the following steps:

[0046] (1) Substrate preparation and pretreatment:

[0047] The substrate is prepared by CVD method, the specific method is as follows:

[0048] Clean the copper foil with acetone solution to remove organic impurities on the surface of the copper foil, then put the cleaned copper foil into the CVD growth chamber, feed argon gas to control the pressure to 340mTorr, and feed hydrogen gas at a flow rate of 20 sccm to heat to 1050°C and keep it for 30min, then remove the copper foil surface oxide, continue to keep the temperature constant, feed the mixed gas of methane and hydrogen at a flow rate of 8 sccm respectively for 20min, and control the volume fraction of hydrogen in the mixed gas in the CVD growth chamber to be 50%, th...

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Abstract

The invention discloses a preparation method for directional growth of cadmium zinc telluride film on a graphene substrate. Firstly, single-layer graphene is prepared on copper foil by CVD method, and then prepared by near-space sublimation method using graphene as the substrate. A layer of oriented CdZnTe thin film. The present invention realizes the sublimation and preparation of thin films in close space by setting the distance between the substrate and the sublimation source, and uses graphene material as the substrate structure, which has a high degree of lattice matching with the target CdZnTe thin film, thereby realizing the CdZnTe thin film with good orientation preparation. The invention aims to prepare oriented CdZnTe films on graphene substrates by sublimation into space, realize low carrier transmission loss between upper and lower poles when devices are made, increase device carrier transmission speed, and increase device transmission speed. Compared with the CdZnTe single crystal growth process, the method of the invention has the advantages of simple process, lower cost, large-area preparation and high feasibility of batch growth.

Description

technical field [0001] The invention relates to a preparation method of a cadmium zinc telluride material, in particular to a preparation method of a cadmium zinc telluride thin film, and also relates to a preparation method of a large-area cadmium zinc telluride material, which belongs to the technical field of inorganic non-metallic material manufacturing technology. Background technique [0002] CdZnTe is an important II-VI compound semiconductor. Because of its high average atomic number, excellent carrier transport performance and large forbidden band width, it can be widely used in the preparation of high-energy nuclear radiation detectors. The detector made of the material has the advantages of large absorption coefficient and high counting rate, and can work effectively at room temperature. Due to its good photoelectric performance, it shows great advantages in environmental monitoring, nuclear physics technology, ray analysis, safety detection, medical imaging and s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/48C30B23/02C30B23/06C30B33/00C30B33/02C30B33/10C23C14/02C23C14/06C23C14/24
CPCC23C14/024C23C14/0629C23C14/24C30B23/025C30B23/066C30B29/48C30B33/00C30B33/02C30B33/10
Inventor 黄健谷青苗周新雨杨帆邹天宇唐可黄浩斐王林军
Owner SHANGHAI UNIV
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