Vertical super-junction double diffused metal oxide semiconductor device and manufacturing method thereof

Abstract

The invention relates to a vertical super-junction double diffused metal oxide semiconductor device, which comprises a plurality of vertical super-junction double diffused metal oxide semiconductor units. Each vertical super-junction double diffused metal oxide semiconductor unit comprises a substrate, a first-type epitaxial layer and a second-type epitaxial layer, wherein the first-type epitaxiallayer is formed at one side of the substrate; and the second-type epitaxial layer is formed in the first-type epitaxial layer, and the width of the second-type epitaxial layer increases gradually ina direction away from the substrate. According to the technical scheme of the invention, the width of the P-type epitaxial layer is set to increase gradually towards the direction away from the substrate, so that influences imposed on the breakdown voltage by the change of Qp/Qn can be reduced, and the electrical performance of the semiconductor device is improved. In addition, the Qp/Qn can be changed within a larger range under the same breakdown voltage, so that requirements for the manufacturing process are relatively simple, and the manufacturing cost is easy to be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a vertical superjunction double-diffused metal oxide semiconductor device and a manufacturing method of the vertical superjunction double-diffused metal oxide semiconductor device. Background technique [0002] In the current super junction semiconductor device, the breakdown voltage BV will fluctuate violently with the change of Qp / Qn, where Qp is the charge amount of the P epitaxial layer, and Qn is the charge amount of the N epitaxial layer. The BV with large fluctuations has a large adverse effect on the super junction semiconductor device. [0003] In order to reduce the fluctuation of BV caused by the change of Qp / Qn, one way in related technologies is to precisely control the ratio of Qp to Qn by improving the manufacturing precision in the process, but this requires high-precision manufacturing and testing equipment, and the cost Too high; another way is to reduce...

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Problems solved by technology

And the BV with a large fluctuation range has a great adverse effect on the super junction semiconductor device.

[0003] In order to reduce the fluctuation of BV caused by the change of Qp / Qn, one way in related technologies is to precisely control the ratio of Qp to Qn by improving the manufacturing precision in the process, but this requires high-precision manufacturing and testing equipment, and the cost Too high; another way is to reduce the total amount of Qp and Qn, thereby reducing the degree of variation of Qp / Qn, but in order to obtain sufficient internal resistance of the component, it is necessary to increase the area or volume of the device, which is not conducive to the thinning of the device

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