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Manufacturing method of reverse-blocking IGBT, and reverse-blocking IGBT

A manufacturing method, reverse resistance type technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as manufacturing difficulties of high-voltage reverse resistance type IGBT, shorten the time required for diffusion, and broaden the voltage range Effect

Inactive Publication Date: 2018-09-28
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Therefore, the technical problem to be solved by the present invention is to overcome the defects of the high-voltage reverse resistance type IGBT manufacturing difficulties in the prior art

Method used

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  • Manufacturing method of reverse-blocking IGBT, and reverse-blocking IGBT

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] This embodiment provides a method for manufacturing a reverse resistance IGBT, such as figure 1 As shown, including the following steps:

[0023] S1. Connect the RB-IGBT chip to the support wafer;

[0024] S2. Back-bonding the support wafer;

[0025] S3. Perform sidewall isolation processing on the sidewalls of the RB-IGBT chip. Specifically, the sidewall isolation processing adopts one or more of diffusion isolation, trench Gree, and V-type isolation.

[0026] In this embodiment, the support wafer includes but is not limited to silicon wafers, glass wafers, metal wafers, and the like.

[0027] In this embodiment, the following steps are also included:

[0028] S4. Process the front side of the RB-IGBT chip;

[0029] S5. Perform front bonding and back separation on the original support sheet.

[0030] S6. Process the back of the RB-IGBT chip and separate the support wafer from the front.

[0031] in figure 1 , The content of step S2 to step S6 is given, and step S1 is not drawn.

[...

Embodiment 2

[0037] This embodiment provides a reverse resistance IGBT, which is manufactured using the manufacturing method of the reverse resistance IGBT provided in Embodiment 1. It is suitable for IGBT, DMOS, FRD and other power semiconductor devices, and is suitable for different materials such as SiC and GaN.

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Abstract

The invention provides a manufacturing method of a reverse-blocking IGBT and the reverse-blocking IGBT. The manufacturing method of the reverse-blocking IGBT comprises the following steps: performingsidewall isolation processing on the sidewall of a RB-IGBT chip after performing back bonding on a support wafer; realizing reverse voltage withstand of the high-voltage RB-IGBT chip through the sidewall isolation processing, and then realizing the manufacturing of the high-voltage reverse-blocking IGBT. Meanwhile, the front bonding and the back bonding are performed on the support wafer twice. The direct sidewall diffusion can be realized through twice bonding operations, thereby greatly shortening the time required for diffusing in the diffusion isolation step, and then the diffusion operation of the large-thickness and high-voltage can be finished within short time, the high-voltage (greater than 1700V) reverse-blocking IGBT chip can be realized, and the voltage range of the prior art is broadened.

Description

Technical field [0001] The invention relates to the technical field of reverse resistance IGBTs, in particular to a method for manufacturing a reverse resistance IGBT and a reverse resistance IGBT. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), also known as insulated gate bipolar transistor, is currently the most representative power electronic device. IGBT also integrates the advantages of power MOS device voltage control switch, high operating frequency and simple driving control circuit, and the advantages of bipolar transistor bipolar conduction. Since the birth of IGBT technology, after more than 30 years of development, IGBT technology has undergone four generations of changes, followed by the first generation planar gate punch-through type, the second generation planar gate non-punch-through type, the third generation trench gate field stop type and the fourth generation Generation carrier storage trench gate bipolar transistors are widely used i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/603
CPCH01L24/82H01L24/95H01L2224/82895H01L2224/82201H01L2224/82005
Inventor 刘江高明超赵哿崔磊王耀华金锐温家良潘艳
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD