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On-chip high-voltage lightning protection circuit

A lightning strike protection, internal high voltage technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of increased area and cost, and achieve the effect of reducing area, saving cost, and being widely used

Active Publication Date: 2021-08-03
西安翔腾微电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to propose a high-voltage lightning strike protection circuit in a chip, which can solve the problem of increased area and cost caused by peripheral circuits in the prior art

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  • On-chip high-voltage lightning protection circuit

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Embodiment Construction

[0016] The technical solutions of the present invention are clearly and completely described below in conjunction with the accompanying drawings and specific embodiments.

[0017] Lightning signals are usually expressed as high-energy signals with large voltage and current. In order to effectively protect the internal circuit, the port protection circuit needs to withstand both high voltage and high current. After the lightning signal enters the chip through the port, the Rin resistor limits the current flowing into the subsequent current, and the DHW diode limits the voltage. After the SCR structure is triggered by the high voltage / current, the energy is released in the way of leakage, and finally the mature technology is adopted. The 6x pmos stack limits the voltage going inside the circuit.

[0018] The present invention provides a high-voltage lightning strike protection circuit in a chip. The circuit includes: a resistor Rin, a resistor Rs, a high-voltage diode DHW, a sil...

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Abstract

The present invention proposes a high-voltage lightning strike protection circuit in a chip, which includes a resistor Rin, a resistor Rs, a high-voltage diode DHW, a silicon-controlled rectifier SCR, and a serial structure PMOS; the internal connection relationship of the silicon-controlled rectifier SCR is the collector of the PNP tube q1 It is connected to the base of NPN transistor q2, the base of PNP transistor q1 is connected to the collector of NPN transistor q2, the resistor R1 connects the base of PNP transistor q1 to the emitter, and the resistor R2 connects the base of NPN transistor q2 to the collector. The emitters are connected, one end of the resistor Rin is connected to the input port dis, and the other end is connected to the cathode of the diode DHW, the resistor Rs, and the emitter of the PNP transistor q1, and the other end of the resistor Rs is connected to the base of the PNP transistor q1 and 6 grids connected in series. The source of the source-connected pmos transistor P1 is connected, the anode of the diode DHW, the emitter of the NPN transistor q2 and the drain of P6 are connected to the ground. The invention realizes the lightning strike protection of the port through the SCR circuit of the port series resistance.

Description

technical field [0001] The invention belongs to the electronic circuit design technology, in particular to a high-voltage lightning protection circuit in a chip. Background technique [0002] Discrete circuits are widely used in electromechanical and other systems. After the system is struck by lightning, the discrete signal changes suddenly. Since the signal at this time is mainly characterized by high voltage and high current, the port of the traditional discrete processing chip has insufficient withstand voltage. The additional lightning protection circuit increases the cost and area. Contents of the invention [0003] The purpose of the present invention is to propose a high-voltage lightning strike protection circuit in a chip, which can solve the problem of increased area and cost caused by peripheral circuits in the prior art. [0004] On-chip high-voltage lightning protection circuit, which includes resistor Rin, resistor Rs, high-voltage diode DHW, silicon-contro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0207
Inventor 田泽邵刚刘敏侠唐龙飞刘颖胡曙凡
Owner 西安翔腾微电子科技有限公司
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