A Method for Improving Control Gate Filling Defects
A technology for controlling gates and defects, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as reducing carrier mobility, reducing polysilicon grain boundaries, and increasing polysilicon resistance.
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[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0036] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.
[0037] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
[0038] In a preferred real-time example of the present invention, according to Figure 4 As shown, a method for...
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