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Patterned substrate and light emitting diode wafer

A light-emitting diode and patterning technology, applied in electrical components, electrical solid-state devices, circuits, etc., can solve the problems of reducing epitaxial quality and tunneling difference, improving epitaxial quality, reducing compressive stress and tunneling difference. row effect

Active Publication Date: 2018-10-16
PLAYNITRIDE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention also provides a light-emitting diode wafer, which can solve the existing problem of poor epitaxy due to lattice mismatch and thus lower epitaxy quality.

Method used

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  • Patterned substrate and light emitting diode wafer
  • Patterned substrate and light emitting diode wafer
  • Patterned substrate and light emitting diode wafer

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Embodiment Construction

[0050] Figure 1A A schematic top view of an LED wafer according to an embodiment of the present invention is shown. Figure 1B shown as Figure 1A A partial cross-sectional schematic of a light-emitting diode wafer. Please also refer to Figure 1A and Figure 1B , the LED wafer 200a of this embodiment includes a patterned substrate 100a , a buffer layer 220 and an epitaxial structure layer 230 . The patterned substrate 100a of this embodiment includes a substrate 110 and a plurality of pattern structures 120a. The substrate 110 has at least one device configuration area 112 ( Figure 1A and Figure 1B Schematically shows a plurality of) and the cutting area 114 surrounding the component placement area 112 . The pattern structure 120 a is integrally formed with the substrate 110 and located in the cutting area 114 of the substrate 110 . The pattern structures 120 a are separated from each other and distributed in the cutting area 114 .

[0051] In detail, the patterned su...

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Abstract

The invention provides a patterned substrate and a light emitting diode wafer. The pattern substrate comprises a base material and a plurality of pattern structures. The base material is provided withat least one element configuration region and a cutting region around the element configuration region. The pattern structures are integrated with the base material, and are located in the cutting region of the base material. The pattern structures are separated from each other, and are distributed in the cutting region.

Description

technical field [0001] The invention relates to a patterned substrate and a light-emitting diode wafer, in particular to a patterned substrate and a light-emitting diode wafer that can improve epitaxy quality. Background technique [0002] In the process of making light-emitting diodes, it is necessary to grow another different material (such as an epitaxial structure) on a material (such as a substrate), and at this time, the matching degree between the lattice atoms of the two must be considered. If the lattice size gap between the two materials is too large, a stress field will inevitably be generated at the interface of the two materials. Most of the defects or dislocations exist in this interface, and when the epitaxial structure is formed, it will be found that threading dislocation extends from this interface, resulting in poor epitaxy quality and affecting the performance of the device. . Contents of the invention [0003] The invention provides a patterned subst...

Claims

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Application Information

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IPC IPC(8): H01L25/075H01L33/12H01L33/22
CPCH01L25/0753H01L33/12H01L33/22
Inventor 赖彦霖王信介吴俊德严千智
Owner PLAYNITRIDE
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