An esd protection device with bidirectional diode string triggering scr structure

Abstract

The invention provides an ESD protection device with a bidirectional diode string triggering SCR structure, which belongs to the field of electrostatic discharge protection of integrated circuits. The ESD protection device includes diode strings, bidirectional SCR structures and metal lines formed by split well technology; deep N wells are set on the P substrate, and the first P well, first P well, and In the first N well, the second P well, and the second N well, a P+ implantation region and an N+ implantation region are arranged in each well; in the second N well region, a mask is used to prepare a plate, and the P wells are inserted at intervals, each The surroundings of the P well are isolated by N wells, and a pair of P+ injection regions and N+ injection regions are respectively set in each P well; the metal wires are connected to the injection regions, and the positive and negative electrodes are drawn from the metal wires for positive communication. conduction and reverse conduction. The invention can control the trigger voltage by increasing or decreasing the number of diodes formed by well division, so that the device can be more widely used in the low-voltage field.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge protection of integrated circuits, and in particular relates to an ESD protection device with a bidirectional diode string triggering SCR structure, which can be used to improve the ESD protection reliability of on-chip ICs. Background technique [0002] With the wide application of integrated circuits (ICs) and the decreasing feature size of integrated manufacturing processes, the operating voltage of IC products is gradually reduced, and the electrostatic discharge (ESD) protection of on-chip ICs is facing greater challenges. Especially with the rapid development of radio frequency circuits, the ESD protection of low-voltage and radio frequency ICs, in terms of low trigger voltage, small parasitic capacitance and strong ESD robustness, all put forward strict ESD protection for the ESD protection design of on-chip ICs need. Traditional ESD protection solutions such as MOS tubes and diodes ...

AI Technical Summary

Problems solved by technology

Traditional ESD protection solutions such as MOS tubes and diodes are difficult to adapt to the current development trend of ESD protection for electronic products, especially RF ICs, due to factors such as large capacitance parasitic effects or high trigger voltages.

[0003] Existing diode-triggered SCR ESD protection schemes have problems such as inconvenient adjustment of trigger voltage, large layout area, low ESD robustness per unit area, and one-way protection of ESD pulses. protection applications, subject to certain restrictions

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