A floating gate memory cell and its manufacturing method
A memory cell and floating gate technology, applied in electrical components, semiconductor devices, circuits, etc., can solve problems such as poor compatibility of manufacturing processes and complex process control, reduce signal propagation delay, increase read and write speed, and reduce crosstalk Effect
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[0045] The present invention provides a floating gate memory unit and its preparation method. The core idea is to form an amorphous carbon (APF) side wall, after the deposition of a hole plug etch stop layer, and remove the APF by plasma to form an air gap side wall. Wall, reduce the parasitic capacitance of the hole plug and the gate, thereby reducing the signal propagation delay of the integrated circuit, improving the read and write speed, and improving the data retention capacity of the storage unit; reducing the parasitic capacitance between the floating gate storage units, effectively reducing the floating gate storage Crosstalk between units.
[0046] In the following, the present invention will be described in detail and specifically through specific embodiments and accompanying drawings, so as to better understand the present invention, but the following embodiments do not limit the scope of the present invention.
[0047] This embodiment provides a method for manufac...
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