Flexible transistor and manufacturing method thereof

Abstract

Embodiments of the invention provide a flexible transistor and a manufacturing method thereof. According to the method, a liquid metal source electrode and a liquid metal drain electrode which are arranged at intervals, and a semiconductor layer used for electrically connecting the liquid metal source electrode and the liquid metal drain electrode are manufactured on a flexible substrate; and a dielectric layer is manufactured on the semiconductor layer, and a liquid metal gate is manufactured on the dielectric layer. According to the manufacturing method of the flexible transistor and the flexible transistor provided by the invention, the flexible substrate is adopted, and on the basis of the flexible substrate, liquid metal is used for manufacturing the liquid metal source electrode, theliquid metal drain electrode and the liquid metal gate electrode, so that the flexible transistor is obtained, wherein the flexible transistor is used for a large-scale integrated circuit for an electronic product with a bendable property.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a method for manufacturing a flexible transistor and a flexible transistor. Background technique [0002] Field-effect transistors are conventional electronic devices in the semiconductor and microelectronics industries. They are usually prepared on silicon substrates combined with micro-nano processing techniques. They have high input resistance, low noise, low power consumption, large dynamic range, easy integration, and no secondary Secondary breakdown phenomenon, wide safe working area and other advantages. The application of field effect transistors in electronic products has greatly promoted the development of electronic products. [0003] However, with the improvement of people's living standards, people have put forward high requirements for the performance of electronic products used, especially the bendability of electronic products has received more attention from...

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Problems solved by technology

[0005] Aiming at the defects of the existing technology in the background technology, the present invention provides a flexible transistor manufacturing method and a flexible transistor, which solves the problem that the field effect transistor in the prior art is too hard, has low flexibility, and is difficult to be used in electronic devices with bendability requirements. The problem of large-scale application in the integrated circuit of the product

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