CMOS image sensor and its manufacturing method

A technology of an image sensor and a manufacturing method, which is applied to semiconductor devices, electric solid-state devices, radiation control devices, etc., can solve problems such as increasing costs, and achieve cost-saving effects.

Active Publication Date: 2021-04-13
SHANGHAI HUALI INTEGRATED CIRCUIT CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, in the prior art, the introduction of the P-type doped isolation region 102 will increase the cost

Method used

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  • CMOS image sensor and its manufacturing method
  • CMOS image sensor and its manufacturing method

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Embodiment Construction

[0045] Such as Figure 4 Shown is a schematic structural diagram of photosensitive diodes of each pixel unit of the CMOS image sensor of the embodiment of the present invention. The CMOS image sensor of the embodiment of the present invention is formed on a P-type semiconductor substrate 1 and includes a plurality of pixel units.

[0046] Each of the pixel units includes a surface clamped photodiode, and the clamped photodiode includes an N-type buried layer formed in the P-type semiconductor substrate 1 and a surface P+ layer 4 formed on the surface of the N-type buried layer. And the clamping photodiode is formed by stacking the P-type semiconductor substrate 1 , the N-type buried layer and the surface P+ layer 4 .

[0047] In the embodiment of the present invention, the N-type buried layer includes a deep N well 3a, an N well 3b and a surface N-type layer 3c, the junction depth of the deep N well 3a is greater than the junction depth of the N well 3b and the N The well 3b ...

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Abstract

The invention discloses a CMOS image sensor, which is formed on a P-type semiconductor substrate and includes a plurality of pixel units; each pixel unit includes a surface-clamped photodiode, and the clamped photodiode includes an N sensor formed in a P-type semiconductor substrate. Type buried layer and the surface P+ layer formed on the surface of the N-type buried layer; a field oxygen layer is formed on the surface of the P-type semiconductor substrate between adjacent surface clamp photodiodes; a first field oxygen layer is formed at the bottom of the field oxygen layer P-type doped isolation region; a fully implanted second P-type doped isolation region is formed at the bottom of the N-type buried layer, and the depth of the bottom surface of the first P-type doped isolation region is greater than or equal to the second P-type doped isolation region The depth of the top surface of the region is such that the bottom of the first P-type doped isolation region and the second P-type doped isolation region overlap. The invention also discloses a manufacturing method of the CMOS image sensor. The invention can save cost under the condition of realizing substrate noise isolation.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a CMOS image sensor; the invention also relates to a manufacturing method of the CMOS image sensor. Background technique [0002] The existing CMOS image sensor (CMOS Image Sensor, CIS) is composed of a pixel (Pixel) unit circuit and a CMOS circuit. Compared with the CCD image sensor, the CMOS image sensor has better integration because it adopts the CMOS standard manufacturing process, and can It is integrated on the same chip with other digital-analog calculation and control circuits, which is more suitable for future development. [0003] According to the number of transistors contained in the pixel unit circuit of the existing CMOS image sensor, it is mainly divided into 3T structure and 4T structure. [0004] Such as figure 1 Shown is a schematic diagram of an equivalent circuit of a pixel unit circuit of an existing 3T CMOS image sensor; the p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1463H01L27/14689
Inventor 李岩张武志
Owner SHANGHAI HUALI INTEGRATED CIRCUIT CORP
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