The invention relates to a single-mode high-power vertical cavity surface-emitting laser based on a SiC heat sink. Including N electrode, SiC substrate, N-type DBR, active region, oxidation limiting layer, P-type DBR, SiC (electrode + window + heat sink), SiO2 mask, solder. The present invention is characterized by adopting a flip-chip top-emitting structure. The light output window is made on the P-type DBR, and the top light output method is adopted, and the heat sink is also placed at the end of the P surface. SiC wafers have high thermal conductivity, high electrical conductivity and high transmittance of near-infrared light after being modified by special technology. The P electrode, light window and heat sink in the traditional structure are replaced by SiC wafers, and the functions of the three are combined into one. The SiC wafer is used as an electrode, and the circular P electrode of the traditional VCSEL is replaced by a planar electrode or a non-uniform grid electrode; the SiC wafer is used as a heat sink material, and the thermal expansion coefficient is similar to that of GaAs materials, and it is directly flip-chip connected to the P surface in the epitaxial wafer; The SiC wafer simultaneously becomes the light exit window.