Single-mode high-power vertical-cavity surface-emitting laser based on sic heat sink

Abstract

The invention relates to a single-mode high-power vertical cavity surface-emitting laser based on a SiC heat sink. Including N electrode, SiC substrate, N-type DBR, active region, oxidation limiting layer, P-type DBR, SiC (electrode + window + heat sink), SiO2 mask, solder. The present invention is characterized by adopting a flip-chip top-emitting structure. The light output window is made on the P-type DBR, and the top light output method is adopted, and the heat sink is also placed at the end of the P surface. SiC wafers have high thermal conductivity, high electrical conductivity and high transmittance of near-infrared light after being modified by special technology. The P electrode, light window and heat sink in the traditional structure are replaced by SiC wafers, and the functions of the three are combined into one. The SiC wafer is used as an electrode, and the circular P electrode of the traditional VCSEL is replaced by a planar electrode or a non-uniform grid electrode; the SiC wafer is used as a heat sink material, and the thermal expansion coefficient is similar to that of GaAs materials, and it is directly flip-chip connected to the P surface in the epitaxial wafer; The SiC wafer simultaneously becomes the light exit window.

Description

technical field [0001] The invention relates to a vertical-cavity surface-emitting laser technology, in particular to a single-mode high-power vertical-cavity surface-emitting laser based on a SiC heat sink. Background technique [0002] Due to its superior beam quality, two-dimensional integration and intracavity frequency doubling, VCSEL is developing towards high power. It is expected that high-power VCSEL surface-emitting arrays with a power of tens of watts to hundreds of watts will be vigorously developed, and will replace the current laser line arrays and stacked arrays, and be used in industrial processing, solid-state lasers, and fiber laser pump sources. [0003] At present, only a few scientific research institutes and companies in the world have carried out research on high-power VCSELs, mainly including ULM University in Germany, Princeton Optoelectronics Company in the United States, and Changchun Institute of Optics and Mechanics of Chinese Academy of Sciences...

AI Technical Summary

Problems solved by technology

The technical problems faced are mainly: (1) increasing the beam emission window and the effective area of ​​the active region requires increasing the pump current, which leads to a square-fold increase in the heat generation in the cavity and the top DBR; (2) although increasing the beam emission The window can increase the light output power and is not limited by optical catastrophe, but the carrier aggregation effect makes the injected carriers tend to gather in a circular zone at the edge of the active region when the diameter of the active region of the device exceeds 10 μm

This will affect the uniformity of the optical output power density

The traditional ring electrode structure exacerbates this aggregation effect

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