Top-emitting silicon-based perovskite light-emitting diode and preparation method thereof

A technology of light-emitting diodes and perovskites, which is applied in the manufacture of semiconductor/solid-state devices, organic semiconductor devices, electrical components, etc., can solve the problems of insufficient matching of p-type silicon wafer energy bands and inconsistent properties of the hole transport layer, and achieve Effects of lowering the injection barrier and increasing the starting voltage

Inactive Publication Date: 2020-07-03
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a top-emitting silicon-based perovskite light-emitting diode and its preparation method. The light-emitting diode solves the problem of insufficient matching of the energy bands of p-type silicon wafers; Difficulties of inconsistency; under the premise of ensuring normal injection of current and not damaging the perovskite layer, the light extraction rate can be increased as much as possible to improve the external quantum efficiency of the device

Method used

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  • Top-emitting silicon-based perovskite light-emitting diode and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0042] The preparation method of the top-emitting silicon-based perovskite light-emitting diode provided in this embodiment is as follows:

[0043] a. Use an ultrasonic cleaner to clean and dry the silicon wafer;

[0044] b. Evaporate a layer of Cr metal layer on the surface of the cleaned silicon wafer with a thickness of 30nm and a rate of 0.3A° / s; then evaporate a layer of Au metal layer with a thickness of 50nm and a rate of 0.6A° / s;

[0045] c. Prepare a layer of NiO on the bottom metal electrode by magnetron sputtering x Transition layer with a thickness of 10nm and a rate of 1.0A° / s;

[0046] d. Take 85μl of PEDOT:PSS solution, set the spin coating speed to 2500r / min, time 40s, and anneal at 150℃ for 15min;

[0047] e. Weigh 80.8 mg of phenethyl ammonium bromide, 4.0 mg of methyl ammonium chloride, 50.0 mg of methyl ether ammonium bromide, and 220.2 mg of PbBr 2 Dissolve in 1ml of DMSO solution; draw 70μl of perovskite solution, spin-coat at 3000r / min for 120s, add 1...

Embodiment 2

[0053] The preparation method of the top-emitting silicon-based perovskite light-emitting diode provided in this embodiment is as follows:

[0054] a. Use an ultrasonic cleaner to clean and dry the silicon wafer;

[0055] b. Evaporate a layer of Cr metal layer on the surface of the cleaned silicon wafer with a thickness of 30nm and a rate of 0.3A° / s; then evaporate a layer of Au metal layer with a thickness of 50nm and a rate of 0.6A° / s;

[0056] c. Prepare a layer of MoO on the bottom metal electrode by magnetron sputtering 3 A transition layer with a thickness of 5nm and a rate of 0.3A° / s;

[0057] d. Take 85μl of PEDOT:PSS solution, set the spin coating speed to 2500r / min, time 40s, and anneal at 150℃ for 15min;

[0058] e. Weigh 80.8 mg of phenethyl ammonium bromide, 4.0 mg of methyl ammonium chloride, 50.0 mg of methyl ether ammonium bromide, and 220.2 mg of PbBr 2 Dissolve in 1ml of DMSO solution; draw 70μl of perovskite solution, spin-coat at 3000r / min for 120s, add ...

Embodiment 3

[0064] a. Use an ultrasonic cleaner to clean and dry the silicon wafer;

[0065] b. Evaporate a layer of Cr metal layer on the surface of the cleaned silicon wafer with a thickness of 30nm and a rate of 0.3A° / s; then evaporate a layer of Au metal layer with a thickness of 50nm and a rate of 0.6A° / s;

[0066] c. Take 85μl of PEDOT:PSS solution, set the spin coating speed to 2500r / min, time 40s, and anneal at 150℃ for 15min;

[0067] d. Weigh 80.8 mg of phenethyl ammonium bromide, 4.0 mg of methyl ammonium chloride, 50.0 mg of methyl ether ammonium bromide, and 220.2 mg of PbBr 2 Dissolve in 1ml of DMSO solution; draw 70μl of perovskite solution, spin-coat at 3000r / min for 120s, add 100μl of chlorobenzene solvent dropwise at 40s, and anneal at 90°C for 1h after spin-coating; absorb 50μl 2mg / ml TPPO solution, spin coating speed 7000r / min, time 1min;

[0068] e. Evaporate a TPBi electron transport layer on the perovskite light-emitting layer and the modified layer, with a thickn...

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Abstract

The invention discloses a top-emitting silicon-based perovskite light-emitting diode, which takes a silicon wafer as a device substrate, and a bottom metal electrode, a transition layer, a hole transport layer, a perovskite light-emitting layer, a modification layer, an electron transport layer, a transparent electrode and an anti-reflection dielectric layer are sequentially arranged on the silicon wafer. The invention also discloses a preparation method of the light emitting diode. A silicon wafer serves as a device substrate, a bottom metal electrode is evaporated on the basis of the siliconwafer, then a transition layer is prepared through a magnetron sputtering method, a hole transport layer, a perovskite light-emitting layer and a modification layer are sequentially spin-coated on the transition layer, and an electron transport layer, a transparent electrode and an anti-reflection medium are sequentially prepared through a vacuum evaporation method after spin-coating is completed. The light-emitting diode solves the problem that p-type silicon wafer energy bands are not matched enough; the difficulty that the properties of the hole transport layer on different substrates arenot unified is overcome; on the premise of ensuring normal current injection and not damaging the perovskite layer, the light extraction rate is improved as much as possible, so that the external quantum efficiency of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of preparation of silicon-based perovskite light-emitting diodes, and in particular relates to a top-emitting silicon-based perovskite light-emitting diode and a preparation method thereof. Background technique [0002] Since the first perovskite light-emitting diode device working at room temperature was reported in 2014, in just five years, the external quantum efficiency of perovskite LEDs has increased rapidly from less than 1% initially to 20%. Above, reached the level close to the commercial OLED. Lead halide perovskite has a series of advantages such as direct band gap, high bipolar carrier mobility, high photoluminescence quantum yield, and can be prepared by low-temperature solution method. It is a very promising luminescent material. [0003] Silicon-based optoelectronics is an important development direction proposed to solve the physical limit of the traditional chip manufacturing process. Its m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/54H01L51/56
CPCH10K50/805H10K50/84H10K2102/00H10K50/844H10K71/00
Inventor 方彦俊闫敏行田鸿君秦丰尤杨德仁
Owner ZHEJIANG UNIV
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