A silicon-based electroabsorption modulator and its preparation method

An electro-absorption modulator, silicon-based technology, applied in the field of optical interconnection, can solve the problems of complex manufacturing process, complex process, small process tolerance, etc. Effect
CN108828797BActive Publication Date: 2020-08-25INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Patents(China)
Current Assignee / Owner
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Publication Date
2020-08-25

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Abstract

The invention provides a silicon-based electro-absorption modulator and a preparation method thereof. The modulator uses voltage to adjust the light absorption coefficient of a semiconductor on the basis of an electro-absorption mode, and then the intensity of an optical signal is adjusted. Silicon is a weak electro-optical material, so that the silicon is introduced into material germanium whichhas a remarkable electro-optical absorption adjusting effect in a communication wave band C wave band and is compatible with the CMOS technology. Through an epitaxial growth modulation layer (200), light beams are smoothly coupled into and coupled out of the modulation layer (200), oscillation of light field power of the light beams between the modulation layer and a waveguide layer is not generated, the dependence relation between the insertion loss of a device and the length of the modulation layer is eliminated, meanwhile, different working wavelengths can be achieved by adjusting alloy components in the modulation layer (200), and the modulation efficiency is high.
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Description

technical field

[0001] The invention relates to the field of optical interconnection, in particular to a silicon germanium electric absorption modulator. Background technique

[0002] With the continuous development of integrated circuits and the continuous improvement of integration density, traditional electrical interconnection has become the main bottleneck for performance improvement, mainly manifested in: delay increase, power consumption increase, and signal crosstalk increase. Due to the characteristics of high speed, high bandwidth and low power consumption of optical interconnection, on-chip optical interconnection based on silicon-based photonic devices is expected to solve the limitation of traditional electrical interconnection on the development of integrated circuits. Among them, the silicon-based electro-optic modulator is one of the key devices for silicon-based optical interconnection, and it is also an important research topic in recent years. There are t...

Claims

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