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Groove at top part of pixel unit and manufacturing method thereof

A technology of a pixel unit and a manufacturing method, which is applied to electrical components, radiation control devices, diodes, etc., can solve the problems of pixel unit damage and limitations, and achieve the effect of good light absorption

Active Publication Date: 2018-11-16
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitation of photolithography registration accuracy, ultra-deep trench etching often causes pixel unit damage

Method used

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  • Groove at top part of pixel unit and manufacturing method thereof
  • Groove at top part of pixel unit and manufacturing method thereof
  • Groove at top part of pixel unit and manufacturing method thereof

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Embodiment Construction

[0039] Such as Figure 2A As shown, it is a top view of the groove on the top of the pixel unit according to the embodiment of the present invention; Figure 2B is along Figure 2A In the cross-sectional view of line BB, in the embodiment of the present invention, the pixel unit is formed in the active region 1 , and the peripheral side of the active region 1 is isolated by field oxygen 4 . Usually, the field oxygen 4 is a shallow trench 6 field oxygen, and the active region 1 is composed of a semiconductor substrate such as a silicon substrate 1 a isolated by the field oxygen 4 . The pixel unit is a pixel unit of a CMOS image sensor, including a 3T structure and a 4T structure.

[0040] A polysilicon layer 2 is formed around the pixel unit, and the polysilicon layer 2 fully exposes the area of ​​the pixel unit. The polysilicon layer 2 has a surrounding structure composed of multiple polysilicon segments in a plan view. A gate oxide layer is isolated between the polysilico...

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Abstract

The invention discloses a groove at the top part of a pixel unit. The pixel unit is formed in an active area, a polycrystalline silicon layer is formed at the peripheral side of the pixel unit, and the polycrystalline silicon layer exposes the area of the pixel unit completely; a top dielectric layer covers the surface of the pixel unit and the polycrystalline silicon layer; a groove is formed through etching the top dielectric layer, the opening boundary in the bottom area of the groove is defined in a self alignment mode by the side surface of the polycrystalline silicon layer, and the bottom part of the groove is ensured to fully open the area of the pixel unit; the opening boundary in the top area of the groove is defined through photoetching, and the opening in the top area of the groove is larger than that in the bottom area of the groove; and the etching process of the groove uses the polycrystalline silicon layer as a stop layer and enables the opening boundary in the top areaof the groove to fall on the polycrystalline silicon layer. The invention also discloses a method of manufacturing the groove at the top part of the pixel unit. Damages generated on the surface of thepixel unit by the etching process of the groove can be prevented, and deterioration of pixel function indicators can be prevented.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a groove at the top of a pixel unit; the invention also relates to a method for manufacturing the groove at the top of a pixel unit. Background technique [0002] A CMOS image sensor (CMOS Image Sensor, CIS) is composed of a pixel (Pixel) unit circuit and a CMOS circuit. Compared with a CCD image sensor, a CMOS image sensor has better integration because it adopts a CMOS standard manufacturing process and can be integrated with other The digital-analog calculation and control circuit are integrated on the same chip, which is more suitable for future development. According to the number of transistors contained in the pixel unit circuit of the existing CMOS image sensor, it is mainly divided into 3T structure and 4T structure. [0003] The pixel unit realizes conversion between photoelectric signals through photosensitive diodes. The pixel unit is fo...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14643H01L27/14689
Inventor 宋辉钱俊
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD