Establishment method of sub-circuit model for simulating mosfet temperature and electrical characteristics
A technology of electrical characteristics and establishment methods, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve problems affecting chip reliability and other issues
Active Publication Date: 2021-06-29
BEIJING CHIP IDENTIFICATION TECH CO LTD +2
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Therefore, simply using the BSIM model to simulate the MOSFET will affect the reliability of the chip in a wide temperature range.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0020] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.
[0021] Unless expressly stated otherwise, throughout the specification and claims, the term "comprise" or variations thereof such as "includes" or "includes" and the like will be understood to include the stated elements or constituents, and not Other elements or other components are not excluded.
[0022] The invention proposes a method for establishing a sub-circuit model for simulating the temperature and electrical characteristics of the MOSFET, which can better simulate the electrical characteristics of the MOSFET between minus 50 degrees and a high temperature of 150 degrees. The subcircuit model is extended on the basis of the BSIM model, and the extended model can solve the problem of poor fitting of the BSIM m...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a method for establishing a sub-circuit model for simulating the temperature and electrical characteristics of a MOSFET, comprising the following steps: testing the electrical characteristics of the MOSFET at normal temperature, the first temperature, and the second temperature respectively, and recording the actual electrical characteristic curve, wherein The first temperature is below -40 degrees, and the second temperature is above 125 degrees; the BSIM model is extracted according to the electrical characteristic test results at normal temperature; the equivalent temperature variable resistance and the temperature compensation factor are defined on the basis of the BSIM model to obtain a preliminary Subcircuit model; according to the electrical characteristic test results at normal temperature, the first temperature, and the second temperature, adjust the value of the equivalent temperature variable resistance and the temperature compensation factor so that the electrical characteristic curve of the final subcircuit model simulation can be Accurately fit the actual electrical characteristic curve. The method for establishing the sub-circuit model for simulating the temperature and electrical characteristics of the MOSFET can realize that the electrical characteristic curve simulated by the sub-circuit model in a wider temperature range can better fit the actual situation.
Description
technical field [0001] The invention relates to the field of chip design, in particular to a method for establishing a sub-circuit model for simulating MOSFET temperature and electrical characteristics. Background technique [0002] The chip industry has become an important symbol to measure a country's industrial competitiveness and comprehensive national strength, and is the core of the information industry. With the development of semiconductor manufacturing process, the size of devices has shrunk to the nanometer level. With the continuous development of the scale of integrated circuits, the requirements for circuit integration and cost performance have been continuously improved, the size of wafers has been increasing, and the feature size of devices has been continuously reduced. The problem of circuit reliability has become more and more important. It has become a factor that must be considered in the development and application of integrated circuits. Especially in...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/3308
CPCG06F30/367
Inventor 刘芳陈燕宁李建强付振刘春颖赵东艳张海峰唐晓柯
Owner BEIJING CHIP IDENTIFICATION TECH CO LTD