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Method and device for producing trichlorosilane and method for producing polycrystalline silicon

A technology of trichlorosilane and chlorosilane, which is applied in the field of polysilicon production, can solve the problems of improvement, polysilicon quality reduction, resource waste cost, etc., and achieve the effect of improving quality, improving utilization rate, and being suitable for large-scale promotion and use

Inactive Publication Date: 2018-11-23
SINOPHARM CHEM REAGENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the amount of chlorohydrosilane exceeds the fixed amount of trichlorosilane supplied, the quality of polysilicon obtained by the deposition reaction decreases
However, the superhydrochlorosilane is a potential and recyclable source of silicon, if not properly utilized, it will cause waste of resources and increase of cost

Method used

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  • Method and device for producing trichlorosilane and method for producing polycrystalline silicon
  • Method and device for producing trichlorosilane and method for producing polycrystalline silicon
  • Method and device for producing trichlorosilane and method for producing polycrystalline silicon

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1: Trichlorosilane is produced using the trichlorosilane production equipment of the present invention.

[0037] figure 1A schematic diagram of the process and apparatus of the present invention for the production of trichlorosilane is shown. The method for producing trichlorosilane comprises the following steps: 1) Hydrogenation step: the substance containing tetrachlorosilane and hydrogen are respectively introduced into the hydrogenation reaction vessel 1 through the substance inlet 101 containing tetrachlorosilane and the hydrogen gas inlet 102, and the 2) Separation step: the derived chlorosilane fraction is introduced into the fractionation tower 2 through the chlorosilane fraction inlet 201, and is subjected to fractionation , to obtain trichlorosilane and a mixed fraction containing chlorosuperhydrosilane, and trichlorosilane is exported through a trichlorosilane outlet 203; 3) circulation step: the mixed fraction containing chlorosuperhydrosilane ob...

Embodiment 2

[0038] Embodiment 2: The improved trichlorosilane production equipment of the present invention is used to produce trichlorosilane.

[0039] figure 2 A schematic diagram showing the improved method and the improved apparatus of the present invention for the production of trichlorosilane. The method for producing trichlorosilane comprises the following steps: 1) Hydrogenation step: the substance containing tetrachlorosilane and hydrogen are respectively introduced into the hydrogenation reaction vessel 1 through the substance inlet 101 containing tetrachlorosilane and the hydrogen gas inlet 102, and the Hydrogenation reaction to obtain a chlorosilane fraction comprising trichlorosilane and superhydrochlorosilane, and lead through the chlorosilane fraction 104; 2) impurity removal step: the derived chlorosilane fraction is introduced into the impurity removal device 3 through the chlorosilane fraction inlet 301, After impurity removal (realized by the chemical reaction of form...

Embodiment 3

[0040] Example 3: Production of high-purity trichlorosilane and high-quality polysilicon using the improved trichlorosilane production equipment of the present invention.

[0041] image 3 A schematic diagram showing the method of the present invention for the production of polysilicon is figure 2 Extended application of trichlorosilane production method in China. The method for producing polysilicon comprises the following steps: 1) Hydrogenation step: the substance containing tetrachlorosilane and hydrogen gas are respectively introduced into the hydrogenation reaction vessel 1 through the substance inlet 101 and the hydrogen gas inlet 102 containing tetrachlorosilane, and hydrogenated at 600-1200° C. reaction to obtain a chlorosilane fraction containing trichlorosilane and chlorosilane superhydrogen, and export it through the chlorosilane fraction 104; impurity (by forming the chemical reaction of Si-O-B chemical bond or Si-O-P chemical bond), obtain the chlorosilane fra...

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Abstract

The invention belongs to the technical field of silicon material production, and relates to a method and a device for producing trichlorosilane and a method for producing polycrystalline silicon. Specifically, the method for producing trichlorosilane comprises the following steps: 1) hydrogenating subjecting a substance containing tetrachlorosilane with hydrogen to hydrogenation reaction to obtaina chlorosilane fraction containing trichlorosilane and super-hydrogenated hydrochlorosilane; 2) performing fractionation of the chlorosilane fraction obtained in the step 1) to obtain trichlorosilaneand a mixed fraction containing super-hydrogenated superhydrochlorosilane; and 3) recycling the mixed fraction containing super-hydrogenated superhydrochlorosilane obtained in the step 2) to the step1). The device for performing the method comprises a hydrogenation reaction vessel (1) and a fractionation column (2). The method and the device prividedprovided by the invention can recycle and recover low-boiling by-products which have beenwere discarded in the past, not only improve the utilization rate of raw materials and the output of trichlorosilane, but also improve the quality of polycrystalline silicon, and are suitable for large-scale promotion.

Description

technical field [0001] The invention belongs to the technical field of silicon material production, and relates to a method for producing trichlorosilane, equipment for performing the above method, and a method for producing polysilicon by using the trichlorosilane produced by the above method. Background technique [0002] In the manufacturing process of semiconductor-grade high-purity polysilicon, the Siemens method of reducing high-purity trichlorosilane with high-purity hydrogen and depositing the generated polysilicon on high-purity silicon cores has been widely used. The above-mentioned method mainly includes the following formula (1) The hydrogenation reaction of trichlorosilane and the thermal decomposition reaction of trichlorosilane shown in formula (2). [0003] SiHCl 3 +H 2 →Si+3HCl (1) [0004] 4SiHCl 3 →Si+3SiCl 4 +2H 2 (2) [0005] WO 02 / 100776 A1 discloses a method for preparing polysilicon, which comprises the following steps: (A) trichlorosilane (Si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107C01B33/03
CPCC01B33/03C01B33/1071
Inventor 孙蔚晨陈宗艳雷晓青顾小焱
Owner SINOPHARM CHEM REAGENT
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