A Method for Characterizing the Junction Temperature of AlgainP-based LEDs Using Relative Spectral Rotator Volume

Abstract

The invention, which belongs to the field of LED photoelectric detection, discloses a method for characterizing a junction temperature of an AlGaInP-based LED by using a volume of relative spectral distribution rotation around a Y axis by starting with a 380-nm wavelength. An AlGaInP-based LED is driven to emit light under small currents; a spectrum analyzer measures relative spectral distributionof the AlGaInP-based LED under different temperature conditions and the volume of relative spectral distribution rotation around a Y axis by starting with a 380-nm wavelength is calculated, so that avariation coefficient of the volume with the junction temperature is obtained; and according to the coefficient, a junction temperature of the AlGaInP-based LED under a to-be-measured condition is measured by combining the relative spectral distribution rotation volume at the known junction temperature. Because of the low bandwidth and measurement accuracy requirements by the relative spectral distribution rotation volume, measurement can be completed by using a common spectrograph with low costs; the multi-times measurement stability and accuracy are high. Moreover, the measurement method issimple and is easy to operate; and the LED is not in contact during the measurement process. The application range is wide.

Description

technical field [0001] The invention relates to an LED photoelectric detection method, in particular to a method for characterizing the junction temperature of an AlGaInP-based LED by using the volume of a relative spectral rotator. Background technique [0002] LED (Light Emitting Diode) has been widely used in signal indication, liquid crystal backlight, display, general lighting and other fields. However, the photoelectric color characteristics and lifetime of the LED itself are closely related to the junction temperature. An increase in junction temperature will lead to a decrease in the luminous efficiency of the LED and a shortened lifespan. Therefore, how to quickly, scientifically and conveniently measure the LED junction temperature has become a breakthrough in the problem. [0003] The reported LED junction temperature measurement methods include forward voltage method (see EIA / JEDEC standard JESD51-1, Chinese patents 200920212653.0 and 200910198965.5), thermal r...

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Problems solved by technology

[0007] The purpose of the present invention is to overcome the disadvantages of harsh measurement conditions, low measurement accuracy, and expensive measurement equipment in existing methods for measuring the junction temperature of AlGaInP-based LEDs, and provide a method for characterizing the junction temperature of AlGaInP-based LEDs by using the volume of a relative spectral rotator. The technical solution of the present invention can be measured by using a low-cost ordinary spectrometer, the measurement method is simple and efficient, the LED itself is not touched during the measurement process, the stability and accuracy of multiple measurements are good, and it can be used to measure the junction temperature of a single LED , can also be used to measure the average junction temperature of an array composed of multiple LEDs, with a wide range of applications

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