Devices including nanowires and methods of making the same

Abstract

The invention provides a device comprising nanowires and a production method of the device. The production method comprises the steps of (S1) providing a substrate with grooves; (S2) filling the grooves with an insulating material to form insulating parts, wherein the grooves correspond to the insulating parts one by one; and (S3) etching to remove parts of the substrate at two sides of the insulating parts, forming a plurality of stacked nanowires by the remaining substrate located at two side walls of the insulating parts and forming a first substrate body by the remaining substrate outsidethe nanowires, wherein the insulating parts are located on the surface of the first substrate body. The nanowires formed by using the production method are relatively perfect in lattices and the performance of the device is relatively good; and furthermore, according to the production method, the nanowires are attached to the insulating parts, that is to say, the insulating parts provide the nanowires with support, so that the nanowires can be produced very long and thin, the fracture problem is avoided and high density of the nanowires can be achieved.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular, to a device including nanowires and a manufacturing method thereof. Background technique [0002] In advanced CMOS manufacturing, the combination of nanowire channel and ring gate has become a hot technology to solve the process below 5nm: [0003] One method is: grow a Si / GeSi stack on the substrate by means of epitaxial growth, and then selectively etch the GeSi therein to leave Si nanowires. The advantage is that the process is similar to the FinFet process, but the limitation is that the epitaxial process has more lattice defects than bulk silicon, especially after multi-layer alternating epitaxy, it is difficult to ensure that the crystal lattice of the epitaxial layer is perfect, so the device performance will be affected. [0004] Another method is to use the method of directly etching the silicon substrate (anisotropic etching and isotropic etching alternately) to f...

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Problems solved by technology

[0006] The main purpose of the present application is to provide a device including nanowires and its manufacturing method, so as to solve the problem that the prior art cannot produce longer, thinner and less defective nanowires

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