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Polishing method of indium antimonide single crystal wafers

An indium antimonide single crystal and polishing disc technology is applied in polishing compositions containing abrasives, grinding/polishing equipment, and grinding devices, etc., which can solve problems affecting device performance and other issues, and achieve widened applications, long yields, and high productivity. Lattice perfect effect

Inactive Publication Date: 2020-02-14
云南昆物新跃光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Seriously affect the performance of the device

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A method for polishing an indium antimonide single wafer, the method steps are as follows:

[0018] (1) The indium antimonide single wafer that meets the required wafer size requirements is bonded to the polishing disc with wax, and the indium antimonide single wafer is thinned by rough polishing. The thickness of the indium antimonide single wafer after rough polishing is ( 525±25)μm; antimony surface flatness is less than 5μm root mean square;

[0019] Among them, the coarse polishing solution is a mixed solution of alumina and water with a particle size of 3 μm to 9 μm, and the volume ratio is 1:30; the rough polishing equipment is Shenyang Kejing’s grinding and polishing machine, model: HNIPOL-1202.

[0020] (2) Put the indium antimonide single wafer after the rough polishing into the precision polishing machine, use the fine polishing solution, the speed of the polishing disc is 60r / min, and the pressure is 10g / cm 2 , under the condition of fine polishing solution...

Embodiment 2

[0028] A method for polishing an indium antimonide single wafer, the method steps are as follows:

[0029] (1) The indium antimonide single wafer that meets the required wafer size requirements is bonded to the polishing disc with wax, and the indium antimonide single wafer is thinned by rough polishing. The thickness of the indium antimonide single wafer after rough polishing is ( 525±25)μm; antimony surface flatness is less than 5μm root mean square.

[0030] Among them, the rough polishing solution uses a mixed solution of alumina and water with a particle size of 3 μm to 9 μm, and the volume ratio is 1:30; the rough polishing equipment is Shenyang Kejing’s grinding and polishing machine, model: HNIPOL-1202.

[0031] (2) Put the indium antimonide single wafer after rough polishing into the precision polishing machine, use fine polishing solution, the rotating speed of the polishing disc is 90r / min, and the pressure is 15g / cm 2 , under the condition of fine polishing soluti...

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Abstract

The invention relates to a polishing method of indium antimonide single crystal wafers, and belongs to the technical field of photoelectric materials. According to the method, the formula of a precision polishing solution in the polishing process of the indium antimonide single crystal wafers is designed, the chemical action of the precision polishing solution is matched with the mechanical actionof a polishing disc in a precision polishing machine, then the ultra-precision planarization processing is carried out on the indium antimonide single crystal wafers by strictly controlling the rotating speed, the pressure and the dropping speed of the precision polishing solution, perfect crystal lattices of the polished indium antimonide single crystal wafers are realized, secondary defects caused by the polishing processing in the prior art can be effectively avoided, and the gap in the field of the precision processing of the indium antimonide single crystal wafers is filled. Due to the fact that the crystal lattices of the indium antimonide single crystal wafers processed by the polishing method are perfect, the yield of infrared detectors prepared by the indium antimonide single crystal wafers is greatly improved, and the application of the indium antimonide single crystal wafers to the infrared detector is greatly extended.

Description

technical field [0001] The invention relates to a polishing method for an indium antimonide single wafer, more specifically, relates to a high-efficiency polishing method suitable for an indium antimonide single wafer, and belongs to the technical field of photoelectric materials. Background technique [0002] Indium antimonide is the material with the narrowest band gap and the largest mobility among III-V compound semiconductors. Its physical and chemical properties are stable, and it is widely used in infrared detectors and Hall devices. The quantum efficiency of infrared detectors is closely related to the selected infrared sensitive materials, and indium antimonide has a high quantum efficiency in the 3 μm ~ 5 μm band, and indium antimonide has low cost in the preparation of infrared detectors, indium antimonide infrared Detectors have attracted more and more attention because of their important military applications and broad prospects in civilian applications. With t...

Claims

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Application Information

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IPC IPC(8): B24B37/04B24B37/10B24B57/02C09G1/02
CPCB24B37/044B24B37/10B24B57/02C09G1/02
Inventor 龚晓霞李德香张丽霞吴宇杨雪种苏然杨文运太云见黄晖
Owner 云南昆物新跃光电科技有限公司
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