Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Bidirectional Transient Voltage Suppressor with Auxiliary Diode String Triggering Scr

A transient voltage suppression and diode string technology, applied in the direction of electric solid-state devices, circuits, transistors, etc., can solve the problems of large latch-up risk, low maintenance voltage, etc., and achieve the effect of enhancing robustness and reducing trigger voltage

Active Publication Date: 2020-07-24
JIANGNAN UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, SCR has the characteristics of high trigger voltage and low sustain voltage, and there is a greater risk of latch-up

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Bidirectional Transient Voltage Suppressor with Auxiliary Diode String Triggering Scr
  • A Bidirectional Transient Voltage Suppressor with Auxiliary Diode String Triggering Scr
  • A Bidirectional Transient Voltage Suppressor with Auxiliary Diode String Triggering Scr

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:

[0028] The invention designs a bidirectional transient voltage suppressor that assists in triggering the SCR with the diode string by combining the features of low and controllable trigger voltage of the diode string and strong robustness of the overelectric stress of the SCR structure. The device of the invention can form a current discharge path with strong robustness and no hysteresis characteristics under the action of positive and reverse electrical stresses, and realize bidirectional ESD or transient surge protection.

[0029] A kind of bidirectional transient voltage suppressor proposed by the present invention, the device structure profile is as follows figure 1 As shown, it is characterized in that it mainly includes P substrate 101, deep N well 102, N well 103, P well 104, first P+ implantation region 105, first N+ implantation re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a bidirectional transient voltage suppressor for triggering a SCR by diode strings in an auxiliary way, and belongs to the fields of integrated circuit electrostatic dischargeprotection and antisurge. The bidirectional transient voltage suppressor can be used for improving the electrostatic discharge protection or antisurge capability of an on-chip IC and circuit system.The bidirectional transient voltage suppressor mainly consists of a P substrate, a deep N trap, a N trap, a P trap, a first P+ injection region, a first N+ injection region, a second P+ injection region, a second N+ injection region, a third P+ injection region, a third N+ injection region and a metal wire. The bidirectional transient voltage suppressor has the advantages that by combining the advantages of low triggering voltage of the diode strings, high robustness of BJT or SCR structure electrical over-stress and the like, the device can realize bidirectional ESD or transient surge protection with no hysteresis and high robustness under the positive and opposite electrical stress effect.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge protection and anti-surge of integrated circuits, and relates to an electrostatic discharge protection or anti-surge device, in particular to a bidirectional transient voltage suppressor for auxiliary triggering of SCR by a diode string, which can be used to improve on-chip IC and anti-surge System reliability of the circuit system. Background technique [0002] Since ICs and related electronic products may be affected by electrostatic discharge (ESD), transient voltage or current surge phenomena in the process of manufacturing, assembly, testing and application, the circuit function or system stability may be weakened or destroyed Therefore, the research on ESD protection and anti-surge is particularly important in semiconductor and electronic engineering applications. The damage and loss caused by ESD or surge phenomenon to the national economy has attracted close attention and attention ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262
Inventor 顾晓峰刘湖云梁海莲
Owner JIANGNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com