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Three-dimensional memory

Pending Publication Date: 2018-11-27
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, since the traditional gate-last method needs to deposit a TiN film and a high-K dielectric film before filling the metal gate W after the phosphoric acid wet method removes the dummy gate SiN, this will reduce the space for filling the metal gate to a certain extent and increase The process difficulty of forming metal gate

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Embodiment Construction

[0020] The specific implementation of the three-dimensional memory provided by the present invention and its forming method will be described in detail below in conjunction with the accompanying drawings.

[0021] In the formation process of the existing three-dimensional memory, after the stack structure is formed on the surface of the substrate, it is necessary to etch the stack structure to form a channel hole, then form a functional material layer on the inner wall surface of the channel hole, and then etch the The functional material layer exposes the substrate at the bottom of the channel hole.

[0022] The inventors found that as the integration level of the memory becomes higher and higher, the critical dimension of the channel hole is too small, which will lead to the inability to open the functional material layer formed at the bottom of the channel hole.

[0023] After the channel hole structure is formed in the channel hole, the sacrificial layer is removed, an ope...

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Abstract

The invention relates to a three-dimensional memory. The three-dimensional memory comprises a storage stacked structure, wherein the storage stacked structure comprises control grids and insulating layers which are stacked alternately; the three-dimensional memory further comprises a channel hole structure which penetrates through the storage stacked structure; the width of each control grid is smaller than that of each insulating layer, so that grooves are formed among the adjacent insulating layers, and the channel hole structure is partially located in the grooves. The performance of the three-dimensional memory is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a three-dimensional memory. Background technique [0002] In recent years, the development of flash memory (Flash Memory) is particularly rapid. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Has been widely used. In order to further increase the bit density (Bit Density) of the flash memory while reducing the bit cost (Bit Cost), three-dimensional flash memory (3D NAND) technology has been developed rapidly. [0003] The 3D NAND flash memory structure includes a storage array structure, and the storage array structure includes a multi-layer stack structure. With the continuous increase of the number of layers of the stacked composite dielectric film, it is more and more difficult to form functional sidewalls in the c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11578H01L29/423H10B43/35H10B43/20
CPCH01L29/42364H10B43/35H10B43/20
Inventor 向银松刘隆冬任连娟
Owner YANGTZE MEMORY TECH CO LTD
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