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Replacement metal gate patterning for nanosheet devices

By depositing metal around the nanosheet stack and forming an isolation area, the problem of incomplete work function metal deposition in the nanosheet transistor is solved, the extension of the bottom trench is avoided, and the reliability and performance of the integrated circuit are improved.

Active Publication Date: 2018-12-04
GLOBALFOUNDRIES US INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, it may be difficult to completely deposit different work function metals around the nanosheets of adjacent FETs.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] Embodiments of the present invention provide nanosheet transistor devices that can be used in integrated circuits (ICs) instead of metal gate patterning. A nanosheet transistor refers to a transistor in which a gate is arranged on a stack of nanosheets between a pair of source / drain regions, and a plurality of nanosheets are extended between the pair of source / drain regions. The nanosheets are vertically separated by sacrificial layers.

[0043] In very small transistors such as nanosheet FETs, metal gates are used to avoid undesired variations in threshold voltage. The threshold voltage of a FET is the minimum voltage required to establish a conduction path between the source and drain. The metal gate can be used in conjunction with a work function metal, and a layer of high dielectric constant (high-k) material to form a high-k metal gate (HKMG). A work function metal can be located between the high-k layer and the metal gate and can be used to adjust the threshold ...

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PUM

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Abstract

This disclosure relates to replacement metal gate patterning for nanosheet devices, in particular to a method of replacement metal gate patterning for nanosheet devices including: forming a first anda second nanosheet stack on a substrate, the first and the second nanosheet stacks being adjacent to each other and each including vertically adjacent nanosheets separated by a distance; depositing afirst metal surrounding the first nanosheet stack and a second portion of the first metal surrounding the second nanosheet stack; forming an isolation region between the first nanosheet stack and thesecond nanosheet stack; removing the second portion of the first metal surrounding the second nanosheet stack with an etching process, the isolation region preventing the etching process from reachingthe first portion of the first metal and thereby preventing removal of the first portion of the first metal; and depositing a second metal surrounding each of the nanosheets of the second nanosheet stack.

Description

technical field [0001] The present invention relates to integrated circuit design, and more particularly to forming work function metals for nanosheet transistor devices. Background technique [0002] A nanosheet transistor refers to a field effect transistor (FET) that includes a plurality of stacked nanosheets extending between a pair of source / drain regions. FETs generally include doped source / drain regions formed in a semiconductor substrate and separated by channel regions. A gate insulating layer is placed over the channel region, and a conductive gate electrode is placed over the gate insulating layer. The gate insulating layer and the gate electrode together may be referred to as the gate stack for the device. By applying a moderate voltage to the gate electrode, the channel region becomes conductive and allows current to flow from the source region to the drain region. [0003] To improve the speed of operation of FETs and to increase the density of FETs on integ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/283
CPCH10D64/01H10D64/013H10P14/40B82Y10/00H10D84/0177H10D84/038H10D84/0188H10D84/85H10D62/121H10D30/6735H10D30/014H10D64/017H10D30/43H10D30/6757H10D30/62H10D84/0172H10P50/71H10P50/264H10P14/3462
Owner GLOBALFOUNDRIES US INC