Manufacture method for COB packaged optoelectronic chip with side protection

Abstract

The invention discloses a manufacture method for a COB packaged optoelectronic chip with side protection. According to the manufacture method, a COB packaged optoelectronic chip can be obtained through the cutting of a wafer optoelectronic device, the insulating treatment of a side surface, COB package, electrode connection and finished product cutting. Two side surfaces of the COB packaged optoelectronic chip manufactured by the method of the invention are protected by an insulating adhesive, and therefore, it can be ensured that conductive silver paste does not contact the silicon of the side surfaces of the chip, a condition that a front electrode and the back electrode of the chip are short circuited can be prevented. The method is simple in process, can realize automatic production, can greatly reduce product cost, and has a very bright market application prospect.

Description

Technical field: [0001] The invention relates to the production field of photoelectric chips, in particular to a method for manufacturing a COB packaged photoelectric chip with side protection. Background technique: [0002] Silicon photomultipliers are often used in imaging applications. It is necessary to splice a single SiPM device into a large-scale array on four sides. The traditional method of bonding wires will cause a wide gap "dead zone" on the side where the bonding electrodes are located (for optical signals Insensitive), since SiPM is mostly used in weak light detection, high detection efficiency is very important in use. Therefore, in the package of the SiPM, it is necessary to increase the proportion of the effective detection area as much as possible. [0003] At present, the MPPC device of Hamamatsu in Japan and the SiPM of SensL in Ireland adopt the method of converging the signal to the center of the device, and use photolithography, dry etching (or laser ...

AI Technical Summary

Problems solved by technology

[0003] At present, the MPPC device of Hamamatsu in Japan and the SiPM of SensL in Ireland adopt the method of converging the signal to the center of the device, and use photolithography, dry etching (or laser ablation) and other methods to break through the SiPM in the center of the device. , that is, the TSV through-hole silicon process is used, and then the electrodes are introduced into the back by methods such as insulation precipitation. This process can effectively increase the proportion of the active area, but the process is complicated and the cost is high.

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