Spiral linear silicon drift detector and design method thereof

Abstract

The invention discloses a spiral linear silicon drift detector and a design method thereof. The detector comprises a cuboid-shaped silicon substrate, wherein collection anodes are arranged at two opposite edges of the top surface of the silicon substrate, a chain-shaped front side drift cathode is arranged between the collection anodes, the front side drift cathode is arranged on the silicon substrate in an S shape, a reverse side drift cathode is arranged at the bottom part of the silicon substrate, aluminum layers are attached to the reverse side drift cathode and the collection anodes, silicon dioxide layers are arranged at the top parts of the silicon substrate and the front side drift cathode, the silicon dioxide layers at the two ends and in the middle of the front side drift cathode are etched, and the aluminum layers are attached to the silicon dioxide layers. According to the spiral linear silicon drift detector, automatic voltage division can be realized, the use is convenient, the effective detection area is large, and the charge collection efficiency, the energy resolution and the sensitivity are good.

Description

technical field [0001] The invention belongs to the technical field of radiation detection, and relates to a spiral linear silicon drift detector and a design method thereof. Background technique [0002] The rapid development and application of new semiconductor detectors has promoted the development of high-energy physics. In a large number of measurements, not only the energy spectrum of the incident particles, but also the track of the particles must be detected, which requires the detector to have better position resolution. At this stage, most of them use pixel detectors, fine-tuning detectors and semiconductor drift detectors to achieve position resolution, such as figure 1 The linear silicon drift detector shown is a kind of semiconductor drift detector, which generates P+ cathode drift electrodes by ion implantation on both sides of the N-type silicon substrate, and makes N+ collecting anodes on the edge of the detector, and supplies each Different voltages are app...

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Problems solved by technology

[0003] However, the P+ cathode drift electrodes in the existing linear silicon drift detectors cannot divide the voltage independently, and it is necessary to set up a resistor chain to separately pressurize each P+ cathode drift electrodes, and the electric field in the electron drift channel is related to the surface electric field distribution. Silicon drift detectors are difficult to optimize electron drift through voltage divider resistor chains

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