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Method for manufacturing thin film transistor

A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., capable of solving problems such as failure of thin film transistors

Active Publication Date: 2018-12-11
HKC CORP LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a thin film transistor manufacturing method for the technical problem that the threshold voltage Vth of the thin film transistor drifts a lot under light conditions in the traditional technology and even causes the thin film transistor to fail.

Method used

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  • Method for manufacturing thin film transistor
  • Method for manufacturing thin film transistor
  • Method for manufacturing thin film transistor

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Embodiment Construction

[0021] In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the application. However, the present application can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0022] It should be noted that when an element is referred to as being “disposed on” or “formed” on another element, it may be directly on the other element or there may also be an intervening element. When an element is referred to as being "connected...

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Abstract

The inventionrelates to amethod for manufacturing a thin film transistor. The method includes etching a hydrogenated amorphous silicon layer to form a channel region by a pattern transfer process, andheat-treating the exposed surface of the etched hydrogenated amorphous silicon layer with a process gas including at least one of N2 and NH3 and containing no hydrogen gas. The probability of Si-H bond generated by Si-H combination is reduced, the ratio of Si-H bond in the hydrogenated amorphous silicon layer is reduced. The light stability of TFT is improved and the drift of threshold voltage Vth of TFT under light condition is reduced.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a thin film transistor. Background technique [0002] Thin Film Transistor-Liquid Crystal Display (TFT-LCD) has gradually occupied a dominant position in the display field due to its low power consumption, excellent picture quality, and high production yield. The thin film transistor display includes a display panel and a backlight module, and the display panel includes a color filter substrate and a thin film transistor array substrate. [0003] In the conventional technology, under light conditions, more electron-hole pairs are generated in the hydrogenated amorphous silicon layer of the thin film transistor, so the threshold voltage Vth of the thin film transistor will drift a lot and even cause the thin film transistor to fail. Contents of the invention [0004] Based on this, it is necessary to provide a method for manufacturing a thin film tra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/786
CPCH01L29/6675H01L29/78663
Inventor 莫琼花卓恩宗
Owner HKC CORP LTD
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