Method for manufacturing thin film transistor

A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., capable of solving problems such as failure of thin film transistors

Active Publication Date: 2018-12-11
HKC CORP LTD +1
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide a thin film transistor manufacturing method for the technical problem that the threshold voltage Vth of the thin film transistor drifts a lot under light conditions in the traditional technology and even causes the thin film transistor to fail.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing thin film transistor
  • Method for manufacturing thin film transistor
  • Method for manufacturing thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the application. However, the present application can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0022] It should be noted that when an element is referred to as being “disposed on” or “formed” on another element, it may be directly on the other element or there may also be an intervening element. When an element is referred to as being "connected...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The inventionrelates to amethod for manufacturing a thin film transistor. The method includes etching a hydrogenated amorphous silicon layer to form a channel region by a pattern transfer process, andheat-treating the exposed surface of the etched hydrogenated amorphous silicon layer with a process gas including at least one of N2 and NH3 and containing no hydrogen gas. The probability of Si-H bond generated by Si-H combination is reduced, the ratio of Si-H bond in the hydrogenated amorphous silicon layer is reduced. The light stability of TFT is improved and the drift of threshold voltage Vth of TFT under light condition is reduced.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a thin film transistor. Background technique [0002] Thin Film Transistor-Liquid Crystal Display (TFT-LCD) has gradually occupied a dominant position in the display field due to its low power consumption, excellent picture quality, and high production yield. The thin film transistor display includes a display panel and a backlight module, and the display panel includes a color filter substrate and a thin film transistor array substrate. [0003] In the conventional technology, under light conditions, more electron-hole pairs are generated in the hydrogenated amorphous silicon layer of the thin film transistor, so the threshold voltage Vth of the thin film transistor will drift a lot and even cause the thin film transistor to fail. Contents of the invention [0004] Based on this, it is necessary to provide a method for manufacturing a thin film tra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/786
CPCH01L29/6675H01L29/78663
Inventor 莫琼花卓恩宗
Owner HKC CORP LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap