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A 3D NAND memory and a method for manufacturing that same

A 3D NAND and memory technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of poor electrical performance, wide distribution, reliability problems, etc., and achieve the effect of good electrical performance

Inactive Publication Date: 2018-12-11
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, as the number of stacked layers of word lines increases, the existing 3D NAND memory has the problem of poor electrical performance. For example, 3D NAND memory currently uses polysilicon as the channel material, and its on-state current will decrease with the increase of the number of stacked layers. rapid decrease, which can lead to dyslexia
At present, the method of improving the on-state current of 3D NAND memory with polysilicon channel is to increase the grain size of the channel polysilicon, but this will lead to larger fluctuations and wider distribution of threshold voltages of different memory cells, which will easily cause reliability problems.

Method used

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  • A 3D NAND memory and a method for manufacturing that same
  • A 3D NAND memory and a method for manufacturing that same
  • A 3D NAND memory and a method for manufacturing that same

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Embodiment Construction

[0049] Based on the background technology, it can be seen that the existing 3D NAND memory has problems of poor electrical performance, for example, the on-state current is small and unstable, and the threshold voltage fluctuates greatly.

[0050] The inventors of the present application have discovered through research that the above-mentioned problems exist in the existing 3D NAND memory, because the existing 3D NAND memory mostly uses polysilicon material as the channel layer material in order to control the manufacturing cost.

[0051] However, polysilicon material is used as the channel layer, because there are crystal boundaries in polysilicon, so charge traps will be generated in the channel layer, so that as the number of word line stacked layers increases, the on-state current of the memory cell will decrease with the stacked layer. Rapidly decreasing numbers can lead to dyslexia.

[0052] When polysilicon material is used as the channel layer material, a larger on-st...

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Abstract

A 3D NAND memory and a method for manufacturing the same are disclosed. The channel layer in the 3D NAND memory includes a two-dimensional material layer. Because two-dimensional materials have higherelectron mobility, 3D NAND memories made of two-dimensional materials as channel layer materials can achieve better electrical performance.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a 3D NAND memory and a manufacturing method thereof. Background technique [0002] 3D NAND memory is a flash memory device with a three-dimensional stack structure, and its storage core area is composed of alternately stacked metal gate layers and insulating layers combined with vertical channel transistors. Under the condition of the same area, the more metal gate layers stacked vertically, the higher the storage density and capacity of the flash memory device. The number of stacked layers of word lines in common storage structures can reach tens to hundreds of layers. [0003] However, as the number of stacked layers of word lines increases, the existing 3D NAND memory has the problem of poor electrical performance. For example, 3D NAND memory currently uses polysilicon as the channel material, and its on-state current will decrease with the incre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11582H01L29/24H10B43/35H10B43/27
CPCH01L29/24H10B43/35H10B43/27
Inventor 宋雅丽
Owner YANGTZE MEMORY TECH CO LTD
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