A 3D NAND memory and a method for manufacturing that same

A 3D NAND and memory technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of poor electrical performance, wide distribution, reliability problems, etc., and achieve the effect of good electrical performance
CN108987408AInactive Publication Date: 2018-12-11YANGTZE MEMORY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
YANGTZE MEMORY TECH CO LTD
Publication Date
2018-12-11
Estimated Expiration
Not applicable · inactive patent

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Abstract

A 3D NAND memory and a method for manufacturing the same are disclosed. The channel layer in the 3D NAND memory includes a two-dimensional material layer. Because two-dimensional materials have higherelectron mobility, 3D NAND memories made of two-dimensional materials as channel layer materials can achieve better electrical performance.
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Description

technical field

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a 3D NAND memory and a manufacturing method thereof. Background technique

[0002] 3D NAND memory is a flash memory device with a three-dimensional stack structure, and its storage core area is composed of alternately stacked metal gate layers and insulating layers combined with vertical channel transistors. Under the condition of the same area, the more metal gate layers stacked vertically, the higher the storage density and capacity of the flash memory device. The number of stacked layers of word lines in common storage structures can reach tens to hundreds of layers.

[0003] However, as the number of stacked layers of word lines increases, the existing 3D NAND memory has the problem of poor electrical performance. For example, 3D NAND memory currently uses polysilicon as the channel material, and its on-state current will decrease with the incre...

Claims

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