3D memory device and manufacture method thereof

Abstract

A 3D memory device and a manufacture method thereof are disclosed. The 3D memory device includes a substrate; A first laminated structure and a second laminated structure stacked over the substrate, the first laminated structure and the second laminated structure comprising a plurality of gate conductors and a plurality of interlayer insulating layers alternately stacked, respectively; And a plurality of channel pillars penetrating the first laminated structure and the second laminated structure, The channel pillar includes a channel layer and a tunneling dielectric layer, a charge storage layer and a gate dielectric layer sandwiched between the plurality of gate conductors and the channel layer, and at least a channel layer in the channel pillar extends continuously through a boundary ofthe first stack structure and the second stack structure. The 3D memory device partially breaks the laminated structure at the joint of the two laminated structures and is covered with a channel layer, thereby avoiding the damage of the laminated structure at the joint to form a leakage source and ensuring the continuity of the channel layer, thereby improving the yield and reliability of the 3D memory device.

Description

technical field [0001] The present invention relates to memory technology, and more particularly, to 3D memory devices and manufacturing methods thereof. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectively. Compared w...

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Problems solved by technology

For a stacked structure with a high number of layers, it is difficult to form channel pillars, so it is realized by stacking two or more stacked structures, but this will also cause the channel pillars of the upper and lower layers to be misaligned. Cause damage to the channel column at the corner of the layer-to-layer connection, if not treated, it will form a leakage source, which will make the 3D memory device invalid

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