Chemical-mechanical planarization equipment

Abstract

The invention discloses chemical-mechanical planarization equipment. A polishing module comprises two columns of polishing unit arrays; each column of polishing units comprises a plurality of groups of polishing units; loading platforms corresponding to the two columns of polishing unit arrays are longitudinally arrayed in the column directions of the polishing unit arrays; and a working part of awafer transmission module is located over the loading platforms and completes transmission of a wafer between other loading area and the loading platform and between the loading platforms. Each wafertransmission unit can be cascaded as required to complete the transmission of the wafer between the loading platforms, thereby realizing circulation of the wafer in the entire polishing unit arrays.Since the wafer transmission units are arranged above the loading platforms, the wafer transmission units can pass through the polishing units at any moment without being interfered when polishing heads load or unload the wafers at the loading platforms; and with the adoption of such arrangement, the transmission stroke is reduced advantageously, and the machining efficiency of the chemical-mechanical planarization equipment is improved significantly, compared with that of traditional chemical-mechanical planarization equipment.

Description

technical field [0001] The invention belongs to the technical field of grinding or polishing devices, and in particular relates to chemical mechanical planarization equipment used in the manufacturing process of semiconductor integrated circuit chips. Background technique [0002] With the rapid development of the semiconductor industry, the feature size of integrated circuits tends to be miniaturized, so the high planarization of the semiconductor thin film surface has an important impact on the high performance, low cost and high yield of the device. [0003] Chemical Mechanical Planarization (CMP) technology is a combination of chemical action and mechanical action. Its working principle is that first, the surface material of the workpiece reacts chemically with the oxidant and catalyst in the polishing liquid to form a soft layer that is relatively easy to remove, and then removes the soft layer under the mechanical action of the abrasive and the polishing pad in the pol...

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Problems solved by technology

[0006] The purpose of the present invention is to propose a new type of chemical mechanical planarization equipment with a polishing unit array layout for the problems of low wafer transmission efficiency and complex structure of the transmission mechanism in the existing chemical mechanical planarizatio

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