Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Large-size thermal field rapid temperature stabilizing process for pulling of crystals

A process method and large-scale technology, applied in the field of rapid temperature stabilization of Czochralski single crystal large-scale thermal fields, can solve the problems of relatively high skill requirements for crystal pulling operations, lack of crystal pulling operations, and long time for temperature stabilization, and achieve energy saving and stable temperature. The effect of warm working hours, reducing the loss of primary seed crystal, and increasing the production capacity of single crystal

Inactive Publication Date: 2018-12-18
内蒙古中环晶体材料有限公司
View PDF6 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current technology and equipment in the photovoltaic industry are developing rapidly, and the mainstream thermal field sizes are 26 / 28 / 30 / 32. The characteristics of these large-scale thermal fields are relatively large thermal inertia and long temperature stabilization time, resulting in waste of working hours, limited production capacity, and manual operation. When the temperature is stable, the requirements for crystal pulling operation skills are relatively high
At present, the industry is developing rapidly, and skilled crystal pulling operations are relatively scarce.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-size thermal field rapid temperature stabilizing process for pulling of crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0024] In the following, an embodiment of the present invention will be used to specifically illustrate the process method for the rapid temperature stabilization of the large-scale thermal field of the Czochralski single crystal. Set the supercooling temperature, and carry out the rapid cooling of the temperature stabilization step in the Czochralski single crystal process, making the temperature reduction faster and more direct, and fine-tuning the temperature through closed-loop control, saving the working hours of temperature stabilization, and increasing the temperature of the temperature stabilization step The automation of adjustment reduces labor intensity and labor costs, improves the consistency of the temperature before single crystal seeding in each furnace, increases single crystal production capacity, reduces the loss of primary se...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a large-size thermal field rapid temperature stabilizing process for pulling of crystals. The process comprises the following steps: calibrating the liquid surface temperature of a silicon solution; step 2, collecting initial seeding power data of multi-furnace single crystals; and step 3, setting a supercooling temperature and carrying out fine tuning on temperature throughclosed-loop control. The invention has the following beneficial effects: since the above technical scheme is adopted for temperature adjustment in the procedure of temperature stabilizing and programming is carried out, automatic temperature stabilization is realized, operation time of temperature stabilization is reduced, requirements on the operation skills of crystal pulling are lowered, and one worker is allowed to take care of a plurality of single crystal furnaces at ease.

Description

technical field [0001] The invention belongs to the technical field of single crystal silicon production, and in particular relates to a process method for rapidly stabilizing the temperature of a Czochralski single crystal large-size thermal field. Background technique [0002] The single crystal growth process includes steps such as dismantling, melting, temperature stabilization, seeding, shoulder expansion, shoulder rotation, equal diameter, finishing, and furnace shutdown. The current technology and equipment in the photovoltaic industry are developing rapidly, and the mainstream thermal field sizes are 26 / 28 / 30 / 32. The characteristics of these large-scale thermal fields are relatively large thermal inertia and long temperature stabilization time, resulting in waste of working hours, limited production capacity, and manual operation. When the temperature is stable, the requirements for crystal pulling operation skills are relatively high. At present, the industry is de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/206C30B29/06
Inventor 王建平谷守伟王永青高树良白大伟皇甫亚楠
Owner 内蒙古中环晶体材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products